18403076. HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Ming Chyi Liu of Hsinchu City (TW)
HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18403076 titled 'HIGH VOLTAGE DEVICE WITH GATE EXTENSIONS
Simplified Explanation
The present disclosure describes an integrated chip with source and drain regions, isolation structures, and a gate electrode within the substrate.
- The integrated chip includes a source region and a drain region within the substrate.
- The source and drain regions are separated from each other.
- Multiple isolation structures are present within the substrate.
- The isolation structures have outermost sidewalls facing each other but are separated.
- A gate electrode is located within the substrate.
- The gate electrode consists of a base region between the source region and isolation structures, and gate extensions extending outward from the base region over the isolation structures.
Potential Applications
This technology could be applied in:
- Semiconductor devices
- Integrated circuits
- Microprocessors
Problems Solved
This technology helps in:
- Enhancing the performance of integrated chips
- Improving the efficiency of semiconductor devices
- Increasing the reliability of microprocessors
Benefits
The benefits of this technology include:
- Better isolation between components
- Higher integration density
- Improved overall functionality
Potential Commercial Applications
A potential commercial application for this technology could be in:
- Electronics manufacturing industry
- Semiconductor fabrication companies
- Research and development organizations
Possible Prior Art
One possible prior art for this technology could be:
- Integrated circuits with isolation structures and gate electrodes.
Unanswered Questions
How does this technology compare to existing integrated chip designs?
This technology offers improved isolation and gate electrode design compared to traditional integrated chip designs. It enhances performance and reliability.
What are the specific manufacturing processes involved in creating this integrated chip?
The manufacturing processes involved in creating this integrated chip may include lithography, etching, deposition, and doping techniques. These processes are crucial for achieving the desired structure and functionality of the chip.
Original Abstract Submitted
The present disclosure relates to an integrated chip. The integrated chip includes a source region disposed within a substrate, and a drain region disposed within the substrate and separated from the source region. A plurality of separate isolation structures are disposed within the substrate. The plurality of separate isolation structures have outermost sidewalls that face one another and that are separated from one another. A gate electrode is disposed within the substrate. The gate electrode includes a base region disposed between the source region and the plurality of separate isolation structures and a plurality of gate extensions extending outward from a sidewall of the base region to over the plurality of separate isolation structures.
