18196081. SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seokhyeon Yoon of Suwon-si (KR)

Taehyeon Kim of Suwon-si (KR)

Seunghun Lee of Suwon-si (KR)

Hyeongrae Kim of Suwon-si (KR)

SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN - A simplified explanation of the abstract

This abstract first appeared for US patent application 18196081 titled 'SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN

Simplified Explanation

The semiconductor device described in the patent application includes various components such as active patterns, gate structures, and source/drain layers. These components are arranged in a specific manner to achieve certain characteristics and functionalities.

• The first and second active patterns are located on different regions and extend in a specific direction.
• The first and second gate structures are formed on the first and second active patterns and extend in a different direction.
• The first and second source/drain layers are formed on the active patterns adjacent to the gate structures.
• The first active pattern includes a first well with first and second impurity regions.
• The second active pattern includes a second well with third and fourth impurity regions.
• The width of the first impurity region in the second direction is greater than that of the second impurity region.
• The width of the third impurity region in the second direction is smaller than that of the fourth impurity region.

Potential applications of this technology:

• Semiconductor devices with improved performance and functionality.
• Enhanced control over the flow of electrical current.
• Increased efficiency and reliability of electronic circuits.
• Suitable for various electronic devices such as smartphones, computers, and IoT devices.

Problems solved by this technology:

• Provides a more precise and controlled flow of electrical current.
• Reduces leakage and power consumption in semiconductor devices.
• Enhances the overall performance and reliability of electronic circuits.
• Enables the miniaturization and integration of complex electronic components.

Benefits of this technology:

• Improved functionality and performance of semiconductor devices.
• Increased efficiency and reduced power consumption.
• Enhanced reliability and durability of electronic circuits.
• Enables the development of smaller and more compact electronic devices.

Original Abstract Submitted

A semiconductor device include first and second active patterns, first and second gate structures, and first and second source/drain layers. The first and second active patterns extend on the first and second regions in a first direction. The first and second gate structures are formed on the first and second active patterns, and extend in a second direction. The first and second source/drain layers are formed on the first and second active patterns adjacent to the first and second gate structures. The first active pattern includes a first well having first and second impurity regions. The second active pattern includes a second well having third and fourth impurity regions. A width in the second direction of the first impurity region is greater than that of the second impurity region. A width in the second direction of the third impurity region is smaller than that of the fourth impurity region.