18303205. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
Kyeonghoon Park of Suwon-si (KR)
Donghyuck Jang of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18303205 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with protrusions arranged in two directions, trenches between the protrusions, device isolation layers filling the trenches, gate patterns on the protrusions, and a second device isolation layer between the gate patterns and the second trench.
- Protrusions arranged two-dimensionally on the substrate
- Trenches provided between the protrusions
- Device isolation layers filling the trenches
- Gate patterns on the protrusions
- Second device isolation layer between the gate patterns and the second trench
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices for various electronic applications such as microprocessors, memory chips, and sensors.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by providing better isolation between components and reducing interference.
Benefits
The benefits of this technology include enhanced device performance, increased integration density, improved reliability, and reduced power consumption in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for producing high-performance and energy-efficient electronic devices.
Possible Prior Art
One possible prior art could be the use of similar device isolation techniques in semiconductor manufacturing processes to improve device performance and reliability.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and efficiency improvements offered by this technology.
What are the specific manufacturing challenges associated with implementing this technology on a large scale?
The article does not address the specific manufacturing challenges that may arise when scaling up the production of semiconductor devices using this technology.
Original Abstract Submitted
A semiconductor device include a substrate including a plurality of protrusions protruding from an upper surface thereof and arranged two-dimensionally in a first direction and a second direction intersecting each other, a first trench provided between the protrusions in the first direction, and a second trench provided between the protrusions in the second direction, a first device isolation layer filling the first trench, gate patterns disposed on the protrusions in the second direction, upper surfaces of the protrusions exposed at both sides of the gate patterns, respectively, and a second device isolation layer filling a space between the gate patterns in the second direction and the second trench, and each of the gate patterns has a first sidewall adjacent to the second trench and aligned with an inner wall of the second trench.
