18094597. FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN)
Organization Name
Inventor(s)
Seungchan Yun of Waterford NY (US)
Sooyoung Park of Clifton Park NY (US)
Kang-ill Seo of Springfield VA (US)
FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN) - A simplified explanation of the abstract
This abstract first appeared for US patent application 18094597 titled 'FIELD-EFFECT TRANSISTOR STRUCTURE INCLUDING PASSIVE DEVICE AND BACK SIDE POWER DISTRIBUTION NETWORK (BSPDN)
Simplified Explanation
The patent application describes a field-effect transistor structure that includes various doped regions on a substrate, forming a sequentially connected passive device.
- The structure includes a substrate with at least one doped region, a doped region on one side, and another doped region on the other side of the first doped region.
- There is a channel structure on one side of the substrate, including a doped region on the second doped region.
- On the other side of the channel structure, there is another channel structure including a doped region on the third doped region in the substrate.
- The doped regions (4, 2, 1, 3, and 5) are connected in sequence to form the passive device.
Potential applications of this technology:
- Integrated circuits
- Electronics manufacturing
- Semiconductor devices
Problems solved by this technology:
- Improved performance and functionality of field-effect transistors
- Enhanced integration of passive devices in semiconductor structures
Benefits of this technology:
- Increased efficiency and reliability of electronic devices
- Simplified manufacturing processes
- Enhanced functionality and performance of integrated circuits.
Original Abstract Submitted
Provided is field-effect transistor structure including: a substrate including therein at least one 1doped region, a 2doped region on one side of the 1doped region, and a 3doped region on another side of the 1doped region; a 1channel structure including therein a 4doped region on the 2doped region in the substrate; and a 2channel structure, at a side of the 1channel structure, including therein a 5doped region on the 3doped region in the substrate, wherein the 4, 2, 1, 3and 5doped regions form a sequentially connected passive device.
