18170259. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Ming-Heng Tsai of Hsinchu (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18170259 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a unique cell structure with multiple transistors and a nanosheet structure for improved performance and efficiency.
- The semiconductor device includes a first well region with a first conductivity type, a second well region with a second conductivity type, a cell with a first fork sheet structure, and a pickup tap cell with a nanosheet structure.
- The first fork sheet structure consists of a first transistor over the first well region, a second transistor over the second well region, and a first wall structure along the interface between the two well regions.
- The pickup tap cell includes a pickup transistor formed over the second well region, with source/drain features of the transistors having different conductivity types.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and automotive systems.
Problems Solved
This innovation addresses the need for improved performance and efficiency in semiconductor devices by introducing a unique cell structure with multiple transistors and a nanosheet structure.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and potentially lower power consumption compared to traditional semiconductor devices.
Potential Commercial Applications
The technology described in this patent application has the potential for commercial applications in the semiconductor industry, particularly in the development of high-performance electronic devices for consumer electronics, automotive systems, and other applications.
Possible Prior Art
One possible prior art in this field is the development of nanosheet transistors and advanced cell structures in semiconductor devices to improve performance and efficiency.
Unanswered Questions
How does the nanosheet structure impact the overall performance of the semiconductor device?
The nanosheet structure in the pickup tap cell is designed to enhance the performance of the device, but the specific details of how it achieves this improvement are not clearly explained in the abstract. Further research or detailed analysis of the technology may be needed to understand the full impact of the nanosheet structure on device performance.
What are the specific applications where this semiconductor device with multiple transistors and unique cell structures would be most beneficial?
While the abstract mentions potential applications in various electronic devices, a more detailed exploration of specific use cases or industries where this technology would provide the most significant benefits could help in understanding its market potential and commercial viability.
Original Abstract Submitted
Semiconductor devices are provided. A semiconductor device includes a first well region having a first conductivity type, a second well region having a second conductivity type, a cell, and a pickup tap cell. The cell includes a first forksheet structure. The first forksheet structure includes a first transistor formed over the first well region, a second transistor formed over the second well region, and a first wall structure disposed on and extending along an interface between the first and second well regions. The first transistor and the second transistor are disposed on opposite sides of the first wall structure. The pickup tap cell includes a nanosheet structure. The nanosheet structure includes a pickup transistor formed over the second well region. Source/drain features of the first transistor and the pickup transistor have the second conductivity type, and source/drain features of the second transistor have the first conductivity type.
