18300867. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
Chaeyeong Lee of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18300867 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The integrated circuit device described in the patent application includes a pair of fin-type active regions on a substrate, with a fin isolation insulator between them extending in a different direction.
- Pair of fin-type active regions on a substrate
- Fin isolation insulator between the active regions
- Insulator extends in a different horizontal direction
- First nitrogen-rich barrier film with protrusions
- Second nitrogen-rich barrier film spaced apart from the first film
Potential Applications
- Semiconductor manufacturing
- Integrated circuit design
- Electronics industry
Problems Solved
- Improved isolation between active regions
- Enhanced performance of integrated circuits
- Reduction of cross-talk between components
Benefits
- Higher efficiency in electronic devices
- Increased reliability of integrated circuits
- Better overall performance of semiconductor devices
Original Abstract Submitted
An integrated circuit device includes a pair of fin-type active regions, which extend in a first horizontal direction on a substrate, and a fin isolation insulator between ones of the pair of fin-type active regions to extend in a second horizontal direction that intersects with the first horizontal direction. The fin isolation insulator includes a first nitrogen-rich barrier film having at least one protrusion at a position that is higher than respective top surfaces of each of the pair of fin-type active regions with respect to the substrate, and a second nitrogen-rich barrier film, which is spaced apart from the first nitrogen-rich barrier film and is in a space defined by the first nitrogen-rich barrier film.
