18151792. FILM MODIFICATION FOR GATE CUT PROCESS simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 FILM MODIFICATION FOR GATE CUT PROCESS
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 FILM MODIFICATION FOR GATE CUT PROCESS - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 How does the nitrogen treatment affect the properties of the dielectric fill material?
- 1.11 What are the specific steps involved in the etching process using the hard mask?
- 1.12 Original Abstract Submitted
FILM MODIFICATION FOR GATE CUT PROCESS
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
FILM MODIFICATION FOR GATE CUT PROCESS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151792 titled 'FILM MODIFICATION FOR GATE CUT PROCESS
Simplified Explanation
The patent application describes a process for converting a portion of a dielectric fill material into a hard mask using a nitrogen treatment or nitrogen plasma. This hard mask is used to form an edge area of a device die through an etching process, with another dielectric fill material provided in the edge area afterwards. The completed device may have a gate cut area with a gradient of nitrogen concentration at the upper portion of the gate cut dielectric.
- Nitrogen treatment or nitrogen plasma used to convert dielectric fill material into a hard mask
- Hard mask used to form edge area of device die through etching process
- Another dielectric fill material provided in edge area after forming the edge
- Gate cut area in completed device may have gradient of nitrogen concentration at upper portion of gate cut dielectric
Potential Applications
This technology could be applied in semiconductor manufacturing processes to improve the performance and reliability of electronic devices.
Problems Solved
This technology helps in creating precise edge areas and gate cut areas in device dies, which is crucial for the functionality of electronic devices.
Benefits
The use of a nitrogen-like layer as a hard mask improves the durability and accuracy of the etching process, leading to better quality devices with enhanced performance.
Potential Commercial Applications
This technology could be valuable in the production of integrated circuits, microprocessors, and other electronic components where precise patterning and etching are essential for device functionality.
Possible Prior Art
One possible prior art could be the use of other materials or methods to create hard masks in semiconductor manufacturing processes.
Unanswered Questions
How does the nitrogen treatment affect the properties of the dielectric fill material?
The article does not provide detailed information on how the nitrogen treatment specifically alters the properties of the dielectric fill material.
What are the specific steps involved in the etching process using the hard mask?
The article does not delve into the specific steps or parameters involved in the etching process using the hard mask created from the nitrogen treatment.
Original Abstract Submitted
A process for converting a portion of a dielectric fill material into a hard mask includes a nitrogen treatment or nitrogen plasma to convert a portion of the dielectric fill material into a nitrogen-like layer for serving as a hard mask to form an edge area of a device die by an etching process. After forming the edge area, another dielectric fill material is provided in the edge area. In the completed device, a gate cut area can have a gradient of nitrogen concentration at an upper portion of the gate cut dielectric of the gate cut area.
