18153646. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Sheng Liang of Hsinchu (TW)
Chun-Wing Yeung of Hsinchu (TW)
Chih-Hao Chang of Hsinchu (TW)
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18153646 titled 'SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME
Simplified Explanation
The semiconductor structure described in the patent application includes first and second fins, a separating wall, multiple channel features, epitaxial structures, and a dielectric structure.
- Spaced apart first and second fins are positioned over a substrate.
- A separating wall with opposite first and second wall surfaces is located over the substrate.
- Multiple first channel features extend away from the first wall surface over the first fin, spaced apart from each other.
- Multiple second channel features extend away from the second wall surface over the second fin, also spaced apart.
- Two spaced apart first epitaxial structures are on the first fin, with each first channel feature connecting them.
- Two spaced apart second epitaxial structures are on the second fin, with each second channel feature connecting them.
- A dielectric structure includes at least one bottom dielectric portion separating at least one of the first and second epitaxial structures from a corresponding first and second fins.
Potential Applications
- Advanced semiconductor devices - High-performance electronic components - Integrated circuits
Problems Solved
- Improved performance and efficiency of semiconductor structures - Enhanced connectivity and functionality of electronic devices - Increased speed and reliability of integrated circuits
Benefits
- Higher processing speeds - Lower power consumption - Enhanced overall performance of electronic devices
Original Abstract Submitted
A semiconductor structure includes spaced apart first and second fins over a substrate, a separating wall over the substrate and having opposite first and second wall surfaces, multiple first channel features extending away from the first wall surface over the first fin such that the first channel features are spaced apart, multiple second channel features extending away from the second wall surface over the second fin such that the second channel features are spaced apart, two spaced apart first epitaxial structures on the first fin such that each first channel feature interconnects the first epitaxial structures, two spaced apart second epitaxial structures on the second fin such that each second channel feature interconnects the second epitaxial structures, and a dielectric structure including at least one bottom dielectric portion separating at least one of the first and second epitaxial structures from a corresponding first and second fins.
