18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
Dongwon Kim of Seongnam-si (KR)
SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS - A simplified explanation of the abstract
This abstract first appeared for US patent application 18046656 titled 'SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS
Simplified Explanation
The patent application describes a semiconductor device with a transistor structure that includes multiple channel layers and a gate structure. The gate electrode of the transistor has different compositions in different portions.
- The semiconductor device includes a substrate, an active fin, and a transistor.
- The transistor consists of lower, intermediate, and upper channel layers stacked on top of each other.
- The gate structure surrounds the channel layers and includes a gate dielectric and a gate electrode.
- The gate electrode is divided into lower, intermediate, and upper electrode portions.
- The gate electrode contains a work function adjusting metal element.
- The content of the work function adjusting metal element is different in the lower electrode portion compared to the intermediate and upper electrode portions.
Potential applications of this technology:
- Integrated circuits: The semiconductor device can be used in the manufacturing of integrated circuits for various electronic devices.
- High-performance computing: The transistor structure can enhance the performance of processors used in high-performance computing systems.
- Mobile devices: The semiconductor device can be utilized in the production of mobile devices such as smartphones and tablets.
Problems solved by this technology:
- Improved transistor performance: The different compositions in the gate electrode portions help optimize the transistor's performance.
- Enhanced control of electrical characteristics: The use of a work function adjusting metal element allows for better control of the transistor's electrical characteristics.
- Reduction of power consumption: The semiconductor device can help reduce power consumption in electronic devices, leading to improved energy efficiency.
Benefits of this technology:
- Higher efficiency: The optimized transistor structure can lead to improved efficiency in electronic devices.
- Improved performance: The semiconductor device can enhance the performance of integrated circuits and processors.
- Energy savings: The reduction in power consumption contributes to energy savings and longer battery life in portable devices.
Original Abstract Submitted
A semiconductor device includes a substrate, an active fin on the substrate, and a transistor on the active fin. The transistor includes a lower channel layer, an intermediate channel layer, and an upper channel layer sequentially stacked, and a gate structure traversing the active fin, respectively surrounding the channel layers, and including a gate dielectric and a gate electrode. The gate electrode includes a lower electrode portion between the active fin and the lower channel layer, an intermediate electrode portion between the lower channel layer and the intermediate channel layer, and an upper electrode portion between the intermediate channel layer and the upper channel layer. The gate electrode includes a work function adjusting metal element, and a content of the work function adjusting metal element in the lower electrode portion is different from that in each of the intermediate electrode portion and the upper electrode portion.
