18133276. POWER DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 POWER DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
Organization Name
Inventor(s)
POWER DEVICE AND METHOD OF MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18133276 titled 'POWER DEVICE AND METHOD OF MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a power device with a compound semiconductor layer grown on a substrate, featuring a cooling space region for efficient heat dissipation.
- Compound semiconductor layer epitaxially grown on a substrate
- Gate, source, and drain components on the compound semiconductor layer
- Passivation layer covering the components
- Cooling space region within the substrate for heat dissipation
- Enlargement region within the cooling space region
- Inlet width of the cooling space region less than maximum width of the enlargement region
- Passivation layer and compound semiconductor layer designed to open the cooling space region
Potential Applications
The technology described in the patent application could be applied in high-power electronic devices, such as power amplifiers, RF transmitters, and high-frequency circuits.
Problems Solved
This innovation addresses the issue of heat dissipation in power devices, which can improve overall performance and reliability by preventing overheating.
Benefits
The cooling space region allows for efficient heat dissipation, leading to enhanced device performance and longevity. Additionally, the design optimization can potentially reduce the need for external cooling systems.
Potential Commercial Applications
"Efficient Heat Dissipation in Power Devices: Applications and Benefits"
Possible Prior Art
There may be prior art related to power devices with cooling mechanisms, but specific examples are not provided in the patent application.
Unanswered Questions
How does this technology compare to existing cooling solutions in power devices?
The patent application does not provide a direct comparison to existing cooling solutions in power devices. Further research or analysis would be needed to determine the advantages of this technology over current methods.
What impact could this innovation have on the power electronics industry?
While the benefits of improved heat dissipation are outlined in the patent application, the potential broader impact on the power electronics industry is not explicitly discussed. Further studies or market analysis could shed light on the significance of this innovation in the industry.
Original Abstract Submitted
Provided are a power device and a manufacturing method thereof. A power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semiconductor layer, a source and a drain provided on either side of the gate, a passivation layer provided to cover the source, drain, and gate, and a cooling space region provided to form a cooling path inside the substrate. The cooling space region may be formed to a predetermined depth from the surface of the substrate and include an enlargement region having a width increasing according to a depth from the surface of the substrate. The width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and the passivation layer and the compound semiconductor layer are provided to open the cooling space region.
