18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE
SEMICONDUCTOR DEVICE
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chun-Sheng Liang of Changhua County (TW)
Chih-Hao Chang of Hsin-Chu (TW)
Jhon Jhy Liaw of Hsinchu County (TW)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18152169 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with two fins, two stacks of semiconductor nanosheets, a gate structure, and a dielectric wall with neck portions between adjacent nanosheets in one stack.
- The device features a substrate with two fins, each supporting a stack of semiconductor nanosheets.
- A gate structure wraps around the nanosheet stacks, controlling their operation.
- A dielectric wall with neck portions separates the nanosheets in one stack, enhancing performance.
Potential Applications
The technology described in this patent application could be applied in:
- Advanced semiconductor devices
- High-performance electronics
- Nanotechnology research
Problems Solved
This technology addresses issues related to:
- Improving semiconductor device performance
- Enhancing control over nanosheet structures
Benefits
The benefits of this technology include:
- Increased efficiency in semiconductor devices
- Enhanced functionality in electronic applications
- Potential for smaller, more powerful devices
Potential Commercial Applications
The potential commercial applications of this technology could be seen in:
- Semiconductor manufacturing companies
- Electronics industry for high-performance devices
- Research institutions focusing on nanotechnology
Possible Prior Art
One possible prior art for this technology could be:
- Previous patents related to nanosheet semiconductor devices
Unanswered Questions
How does this technology compare to traditional semiconductor structures?
This technology offers improved performance and control over traditional semiconductor structures, but the exact differences in efficiency and functionality need to be further explored.
What are the potential challenges in scaling this technology for mass production?
While the technology shows promise in enhancing semiconductor devices, scaling it for mass production may pose challenges in terms of cost, manufacturing processes, and integration with existing technologies.
Original Abstract Submitted
A semiconductor device includes a substrate, a first stack of semiconductor nanosheets, a second stack of semiconductor nanosheets, a gate structure and a first dielectric wall. The substrate includes a first fin and a second fin. The first stack of semiconductor nanosheets is disposed on the first fin. The second stack of semiconductor nanosheets is disposed on the second fin. The gate structure wraps the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall is disposed between the first stack of semiconductor nanosheets and the second stack of semiconductor nanosheets. The first dielectric wall includes at least one neck portion between adjacent two semiconductor nanosheets of the first stack.
