18141990. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.9.1 Unanswered Questions
- 1.9.2 How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
- 1.9.3 What are the specific materials used in the isolation pattern and liner, and how do they contribute to the overall functionality of the semiconductor device?
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICES
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18141990 titled 'SEMICONDUCTOR DEVICES
Simplified Explanation
The semiconductor device described in the abstract includes an active pattern on a substrate, an isolation pattern covering the opposite sidewalls of the active pattern, a liner on the isolation pattern, a gate structure contacting the active pattern and the liner, and multiple channels spaced apart in a vertical direction.
- Active pattern on a substrate
- Isolation pattern covering opposite sidewalls of the active pattern
- Liner on the isolation pattern made of a different material
- Gate structure contacting active pattern and liner
- Multiple channels spaced apart in a vertical direction
Potential Applications
The technology described in the patent application could be used in the development of advanced semiconductor devices for various applications such as mobile devices, computers, and other electronic devices.
Problems Solved
This technology helps in improving the performance and efficiency of semiconductor devices by enhancing isolation between components and reducing interference.
Benefits
The benefits of this technology include increased device performance, improved reliability, and reduced power consumption in semiconductor devices.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for manufacturing high-performance integrated circuits and microprocessors.
Possible Prior Art
One possible prior art for this technology could be the use of similar isolation patterns and gate structures in semiconductor devices to improve performance and reduce interference.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and efficiency?
This article does not provide a direct comparison between this technology and existing semiconductor device structures in terms of performance and efficiency.
What are the specific materials used in the isolation pattern and liner, and how do they contribute to the overall functionality of the semiconductor device?
The article does not delve into the specific materials used in the isolation pattern and liner or how they contribute to the functionality of the semiconductor device.
Original Abstract Submitted
A semiconductor device may include an active pattern on a substrate; an isolation pattern on the substrate, the isolation pattern covering opposite sidewalls of the active pattern; a liner on the isolation pattern, a liner including a material different from the isolation pattern; a gate structure contacting an upper surface of the active pattern and an upper surface of the liner; and a plurality of channels spaced apart from each other in a vertical direction perpendicular to an upper surface of the substrate, each of the plurality of channels extending through the gate structure.
