18367852. INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
Organization Name
Inventor(s)
Myunggil Kang of Suwon-si (KR)
INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18367852 titled 'INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR
Simplified Explanation
The integrated circuit device described in the abstract includes a fin-type active region on a substrate, semiconductor patterns with a gate electrode and gate cut insulating pattern, where the gate electrode has a unique structure with curved portions on the gate cut insulating pattern.
- Fin-type active region on substrate
- Semiconductor patterns with gate electrode and gate cut insulating pattern
- Gate electrode with curved portions on gate cut insulating pattern
Potential Applications
This technology could be applied in the development of advanced integrated circuits for various electronic devices, such as smartphones, tablets, and computers.
Problems Solved
This technology helps in improving the performance and efficiency of integrated circuits by optimizing the structure of the gate electrode and gate cut insulating pattern.
Benefits
The curved portions on the gate cut insulating pattern can enhance the overall functionality and reliability of the integrated circuit device, leading to better performance and energy efficiency.
Potential Commercial Applications
The innovative design of the gate electrode and gate cut insulating pattern could be utilized in the production of high-performance processors and memory chips for the consumer electronics market.
Possible Prior Art
One possible prior art could be the use of traditional gate electrode structures without the curved portions on the gate cut insulating pattern.
What materials are used in the fabrication of the fin-type active region?
The materials used in the fabrication of the fin-type active region are not specified in the abstract. It would be important to know the specific materials to understand the performance and characteristics of the integrated circuit device.
How does the unique structure of the gate electrode improve the functionality of the integrated circuit device?
The abstract mentions that the gate electrode has curved portions on the gate cut insulating pattern, but it does not explain how this unique structure enhances the functionality of the device. Further details on this aspect would provide a better understanding of the technology's benefits.
Original Abstract Submitted
In some embodiments, an integrated circuit device includes a substrate, a fin-type active region on the substrate that extends in a first direction, a plurality of semiconductor patterns spaced apart from an upper surface of the fin-type active region and include a channel region, a gate electrode, and a gate cut insulating pattern. The gate electrode extends in a second direction on the fin-type active region and is disposed between the plurality of semiconductor patterns. The gate electrode includes a first sidewall extending in the second direction and a second sidewall extending in the first direction. The gate cut insulating pattern is on a second sidewall of the gate electrode. An upper portion of the gate cut insulating pattern is wider in the second direction than a lower portion of the gate cut insulating pattern. A portion of a sidewall of the gate cut insulating pattern is curved.
