18172703. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Jia-Ni Yu of New Taipei City (TW)

Lung-Kun Chu of New Taipei City (TW)

Chun-Fu Lu of Hsinchu (TW)

Chung-Wei Hsu of Baoshan Township (TW)

Mao-Lin Huang of Hsinchu City (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18172703 titled 'SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME

Simplified Explanation

The semiconductor structure described in the patent application includes first nanostructures, a dielectric wall, a first liner layer, and a gate structure. The first nanostructures are formed over a substrate, with the dielectric wall adjacent to them. The first liner layer is between the first nanostructures and the dielectric wall, in direct contact with the latter. The gate structure surrounds the first nanostructures, with the first liner layer also in direct contact with a portion of the gate structure.

• Explanation of the patent/innovation:

 * Semiconductor structure with first nanostructures, dielectric wall, first liner layer, and gate structure.
 * First nanostructures formed over a substrate.
 * Dielectric wall adjacent to the first nanostructures.
 * First liner layer between the first nanostructures and the dielectric wall, in direct contact with the latter.
 * Gate structure surrounding the first nanostructures, with the first liner layer also in direct contact with a portion of the gate structure.

Potential Applications

The technology described in the patent application could be applied in:

• Semiconductor manufacturing
• Nanotechnology research
• Electronics industry

Problems Solved

This technology helps in:

• Enhancing semiconductor structure stability
• Improving performance of electronic devices
• Facilitating miniaturization of components

Benefits

The benefits of this technology include:

• Increased efficiency in semiconductor devices
• Enhanced durability of electronic components
• Potential for smaller and more powerful devices

Potential Commercial Applications

• "Innovative Semiconductor Structures for Enhanced Performance and Durability"

Possible Prior Art

There may be prior art related to semiconductor structures with similar configurations, but specific examples are not provided in the patent application.

Unanswered Questions

How does this technology compare to existing semiconductor structures in terms of performance and efficiency?

The patent application does not provide a direct comparison with existing semiconductor structures, so it is unclear how this technology stands out in terms of performance and efficiency.

What are the specific manufacturing processes involved in creating the semiconductor structure described in the patent application?

The patent application does not detail the specific manufacturing processes used to create the semiconductor structure, leaving a gap in understanding the practical implementation of the technology.

Original Abstract Submitted

Semiconductor structures and methods for forming the same are provided. The semiconductor structure includes a plurality of first nanostructures formed over a substrate, and a dielectric wall adjacent to the first nanostructures. The semiconductor structure also includes a first liner layer between the first nanostructures and the dielectric wall, and the first liner layer is in direct contact with the dielectric wall. The semiconductor structure also includes a gate structure surrounding the first nanostructures, and the first liner layer is in direct contact with a portion of the gate structure.