18167169. TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Jhon Jhy Liaw of Hsinchu County (TW)
TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF - A simplified explanation of the abstract
This abstract first appeared for US patent application 18167169 titled 'TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF
Simplified Explanation
The abstract describes a patent application related to semiconductor structures and processes involving first and second gate isolation structures with different compositions and heights.
- The first gate isolation structure is formed on a dielectric wall with nanostructure channel regions extending from it.
- The second gate isolation structure is formed on a shallow trench isolation feature.
- The height of the first gate isolation structure is less than the height of the second gate isolation structure.
- The composition of the first gate isolation structure may differ from the composition of the second gate isolation structure.
- In some cases, the first gate isolation structure is formed concurrently with gate spacers.
Potential Applications
This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors.
Problems Solved
This innovation helps in improving the performance and efficiency of semiconductor devices by providing better isolation between components.
Benefits
The use of different compositions and heights for gate isolation structures can enhance the overall functionality and reliability of semiconductor devices.
Potential Commercial Applications
"Enhancing Semiconductor Device Performance with Different Gate Isolation Structures"
Possible Prior Art
There may be prior art related to gate isolation structures in semiconductor devices, but specific examples are not provided in the abstract.
Unanswered Questions
How does the manufacturing process of these semiconductor structures compare to traditional methods?
The article does not delve into the specific manufacturing processes involved in creating these semiconductor structures.
What impact could this technology have on the overall cost of semiconductor device production?
The abstract does not address the potential cost implications of implementing these new gate isolation structures in semiconductor devices.
Original Abstract Submitted
Semiconductor structures and processes are provided that include a first gate isolation structure and a second gate isolation structure. The first gate isolation structure may be formed on a dielectric wall from which nanostructure channel regions extend. The second gate isolation structure may be formed on a shallow trench isolation feature. The height of the first gate isolation structure is less than the height of the second gate isolation structure. The composition of the first gate isolation structure may be different than the composition of the second gate isolation structure. In some implementations, the first gate isolation structure is formed concurrently with gate spacers.
