18097057. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chun Hsiung Tsai of Xinpu Township (TW)

Chih-Hsin Ko of Fongshan City (TW)

Clement Hsing Jen Wann of Carmel NY (US)

Ya-Yun Cheng of Taichung City (TW)

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18097057 titled 'SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

Simplified Explanation

The abstract describes a semiconductor device, specifically a Field Effect Transistor (FET), that includes various layers and components for improved performance and functionality.

• The device includes an isolation insulating layer placed in a trench of the substrate.
• A gate dielectric layer is positioned over the channel region of the substrate.
• A gate electrode is placed over the gate dielectric layer.
• A source and a drain are located adjacent to the channel region.
• An embedded insulating layer is positioned below the source, drain, and gate electrode.
• Both ends of the embedded insulating layer are connected to the isolation insulating layer.

Potential Applications:

• This semiconductor device can be used in various electronic devices such as smartphones, tablets, computers, and other consumer electronics.
• It can also be utilized in industrial applications, automotive electronics, and communication systems.

Problems Solved:

• The device addresses the need for improved isolation between different components of the semiconductor device.
• It solves the problem of reducing leakage current and improving the overall performance of the FET.

Benefits:

• The embedded insulating layer helps in reducing leakage current and improving the efficiency of the device.
• The isolation insulating layer provides better isolation between different components, reducing interference and improving overall performance.
• The device offers improved functionality and performance compared to traditional FETs.

Original Abstract Submitted

A semiconductor device including a FET includes an isolation insulating layer disposed in a trench of the substrate, a gate dielectric layer disposed over a channel region of the substrate, a gate electrode disposed over the gate dielectric layer, a source and a drain disposed adjacent to the channel region, and an embedded insulating layer disposed below the source, the drain and the gate electrode and both ends of the embedded insulating layer are connected to the isolation insulating layer.