18155917. ISOLATION FOR LONG AND SHORT CHANNEL DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 ISOLATION FOR LONG AND SHORT CHANNEL DEVICES
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 ISOLATION FOR LONG AND SHORT CHANNEL DEVICES - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
ISOLATION FOR LONG AND SHORT CHANNEL DEVICES
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Tzu-Ging Lin of Kaohsiung (TW)
ISOLATION FOR LONG AND SHORT CHANNEL DEVICES - A simplified explanation of the abstract
This abstract first appeared for US patent application 18155917 titled 'ISOLATION FOR LONG AND SHORT CHANNEL DEVICES
Simplified Explanation
The abstract describes a method for fabricating multi-gate devices, involving the formation of gate structures over a semiconductor material, etching processes to remove specific gate structures, and the creation of deep and shallow trenches in the semiconductor substrate.
- The method includes forming gate structures over a semiconductor material, comprising a long channel (LC) gate structure and a short channel (SC) gate structure.
- A patterned mask is then formed over the semiconductor material, leaving the LC and SC gate structures exposed.
- An etch process is performed on the LC and SC gate structures through the patterned mask, resulting in the removal of these structures and the formation of deep and shallow trenches in the semiconductor substrate.
Potential Applications
This technology could be applied in the fabrication of advanced semiconductor devices, such as high-performance transistors and integrated circuits.
Problems Solved
This method allows for the precise formation of deep and shallow trenches in the semiconductor substrate, which is essential for creating multi-gate devices with improved performance and efficiency.
Benefits
The fabrication process described in the patent application enables the production of multi-gate devices with enhanced functionality and reliability, contributing to the advancement of semiconductor technology.
Potential Commercial Applications
The technology presented in this patent application could find commercial applications in the semiconductor industry for manufacturing cutting-edge electronic devices with superior performance characteristics.
Possible Prior Art
One possible prior art in this field could be the use of similar etching processes to create trenches in semiconductor substrates for various device applications.
Unanswered Questions
How does this method compare to existing techniques for fabricating multi-gate devices?
This article does not provide a direct comparison with other methods commonly used in the industry for fabricating multi-gate devices.
What are the specific performance improvements achieved by the deep and shallow trenches created in the semiconductor substrate?
The article does not delve into the specific performance enhancements resulting from the formation of deep and shallow trenches in the semiconductor substrate.
Original Abstract Submitted
Provided are multi-gate devices and methods for fabricating such devices. An exemplary method includes forming gate structures over a semiconductor material, wherein the gate structures include a long channel (LC) gate structure and a short channel (SC) gate structure; forming a patterned mask over the semiconductor material, wherein the LC gate structure and the SC gate structure are not covered by the patterned mask; and performing an etch process on the LC gate structure and on the SC gate structure through the patterned mask to remove the LC gate structure and the SC gate structure, wherein removal of the LC gate structure forms a deep trench in the semiconductor substrate having a first depth, and wherein removal of the SC gate structure forms a shallow trench in the semiconductor substrate having a second depth less than the first depth.
