18163857. FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
Jung-Chien Cheng of Hsinchu (TW)
FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD - A simplified explanation of the abstract
This abstract first appeared for US patent application 18163857 titled 'FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD
Simplified Explanation
The patent application describes a device that consists of two vertical stacks of nanostructures formed over a substrate. The device also includes two gate structures and a wall structure between them. Here are the key points:
- The device has a first vertical stack of nanostructures and a second vertical stack adjacent to it.
- The first gate structure is located between the first nanostructures and consists of a first gate portion and a second gate portion.
- The second gate portion extends from one sidewall of the first gate portion to the other sidewall.
- The second sidewall, which is between the first sidewall and the substrate, is made of a different material than the first gate portion.
- There is a second gate structure adjacent to the second nanostructures.
- A wall structure is present between the second gate portion and the second gate structure.
Potential applications of this technology:
- Nanoelectronics: The device could be used in the development of advanced nanoelectronic devices, such as transistors or memory cells.
- Semiconductor industry: The technology could find applications in the semiconductor industry for the fabrication of high-performance integrated circuits.
- Quantum computing: The device's unique structure may have potential applications in the field of quantum computing, where precise control over nanostructures is crucial.
Problems solved by this technology:
- Improved performance: The device's structure allows for better control and manipulation of nanostructures, leading to improved performance in various applications.
- Integration challenges: The technology addresses challenges related to integrating different materials and structures in nanoelectronic devices.
- Miniaturization: The device's design enables the creation of smaller and more efficient electronic components, contributing to the ongoing trend of miniaturization in the industry.
Benefits of this technology:
- Enhanced functionality: The device's unique structure provides enhanced functionality and performance compared to conventional devices.
- Versatility: The technology can be applied to various types of nanostructures and materials, making it versatile for different applications.
- Scalability: The device's design allows for scalability, enabling the production of larger quantities of devices with consistent performance.
Original Abstract Submitted
A device includes a first vertical stack of first nanostructures formed over a substrate, a second vertical stack of second nanostructures adjacent to the first vertical stack, and a first gate structure adjacent the first nanostructures. The first gate structure includes a first gate portion between the first nanostructures, and a second gate portion extending from a first sidewall of the first gate portion to a second sidewall of the first gate portion. The second sidewall is between the first sidewall and the substrate, and is a different material than the first gate portion. A second gate structure is adjacent the second nanostructures, and a second wall structure is between the second gate portion and the second gate structure.
