18169597. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Tzu-Ging Lin of Hsinchu City (TW)

Chun-Liang Lai of Hsinchu City (TW)

Yun-Chen Wu of Hsinchu City (TW)

Ya-Yi Tsai of Hsinchu City (TW)

Shu-Yuan Ku of Hsinchu City (TW)

Shun-Hui Yang of Hsinchu City (TW)

SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF - A simplified explanation of the abstract

This abstract first appeared for US patent application 18169597 titled 'SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF

Simplified Explanation

The abstract describes a method for fabricating semiconductor devices with channel regions formed over a substrate, each including epitaxial structures and a gate structure extending along a second lateral direction. The method involves etching processes to remove portions of the gate structure and channel regions, as well as a substrate below the channel region.

• The method involves forming channel regions with epitaxial structures over a substrate.
• The gate structure is formed over the channel regions, extending along a second lateral direction.
• Portions of the gate structure and channel regions are removed through specific etching processes.
• The etching process for the channel regions includes a silicon etching process and a silicon oxide deposition process.
• A portion of the substrate below the removed channel region is also etched using a third etching process controlled by a pulse signal.

Potential Applications

This technology could be applied in the manufacturing of advanced semiconductor devices, such as high-performance transistors and integrated circuits.

Problems Solved

This method solves the problem of precise and controlled removal of specific portions of the gate structure, channel regions, and substrate during the fabrication process.

Benefits

The method offers improved accuracy and efficiency in the fabrication of semiconductor devices, leading to enhanced device performance and reliability.

Potential Commercial Applications

This technology could find commercial applications in the semiconductor industry for producing cutting-edge electronic components with high precision and performance.

Possible Prior Art

Prior art in semiconductor device fabrication may include methods for etching and patterning gate structures and channel regions, but the specific combination of etching processes and control mechanisms described in this patent application may be novel.

How does this method compare to existing semiconductor fabrication techniques?

This method appears to offer a more controlled and precise approach to etching processes in semiconductor device fabrication, potentially leading to improved device performance. However, a direct comparison with existing techniques in terms of efficiency and cost-effectiveness would provide a clearer understanding of its advantages.

What are the potential challenges or limitations of implementing this method on an industrial scale?

While the method described in the patent application shows promise for enhancing semiconductor device fabrication, there may be challenges in scaling up the process for mass production. Factors such as production costs, equipment compatibility, and process integration could impact the feasibility of adopting this technology in large-scale manufacturing operations.

Original Abstract Submitted

A method for fabricating semiconductor devices includes forming channel regions over a substrate. The channel regions, in parallel with one another, extend along a first lateral direction. Each channel region includes at least a respective pair of epitaxial structures. The method includes forming a gate structure over the channel regions, wherein the gate structure extends along a second lateral direction. The method includes removing, through a first etching process, a portion of the gate structure that was disposed over a first one of the channel regions. The method includes removing, through a second etching process, a portion of the first channel region. The second etching process includes one silicon etching process and one silicon oxide deposition process. The method includes removing, through a third etching process controlled based on a pulse signal, a portion of the substrate that was disposed below the removed portion of the first channel region.