18165635. SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

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SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Meng-Sheng Chang of Chu-bei City (TW)

Yao-Jen Yang of Hsinchu County (TW)

SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18165635 titled 'SEMICONDUCTOR MEMORY DEVICES WITH BACKSIDE HEATER STRUCTURE

Simplified Explanation

- A memory device with one-time-programmable (OTP) memory cells and a heater structure for programming the cells. - OTP memory cells consist of a transistor and a metal structure connected in series on one side of a substrate. - Heater structure on the opposite side of the substrate includes interconnect structures capable of conducting high current to raise the temperature of the resistor during programming.

Potential Applications

- Secure data storage - Embedded systems - IoT devices

Problems Solved

- Secure programming of OTP memory cells - Efficient heating for programming process

Benefits

- Enhanced security for stored data - Improved reliability in programming process - Versatile applications in various electronic devices


Original Abstract Submitted

A memory device includes a plurality of one-time-programmable (OTP) memory cells formed as a memory array. Each of the plurality of OTP memory cells includes a transistor and a metal structure electrically coupled to each other in series, and the plurality of OTP memory cells are formed on a first side of a substrate. The memory device includes a heater structure, disposed on a second side of the substrate opposite to the first side, that includes a plurality of interconnect structures. The plurality of interconnect structures are configured to conduct a substantially high current so as to elevate a temperature of the resistor when any of the OTP memory cells is being programmed.