18200248. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18200248 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with three regions: a cell array region, a peripheral circuit region, and a connection region between them. The device also has a device isolation region that defines a cell active region on the cell array region, a peripheral active region on the peripheral circuit region, and a dummy active region on the connection region. The gate structure of the device includes a gate electrode that extends into the device isolation region on the connection region, crossing over the cell active region on the cell array region. The dummy active region is positioned adjacent to the cell active region, with its upper surface vertically overlapping the gate structure at a lower level than the upper surface of the cell active region.
- The semiconductor device has a unique structure with distinct regions and a gate structure that extends into the device isolation region.
- The device isolation region separates the cell active region and the peripheral active region, ensuring proper functioning of the device.
- The dummy active region on the connection region helps optimize the performance of the device.
- The gate structure's positioning and overlapping with the cell active region and dummy active region contribute to the functionality of the semiconductor device.
Potential Applications
- Integrated circuits
- Microprocessors
- Memory devices
- Power devices
Problems Solved
- Ensures proper isolation between cell and peripheral regions
- Optimizes device performance
- Enhances functionality and reliability of the semiconductor device
Benefits
- Improved functionality and performance of semiconductor devices
- Enhanced reliability and durability
- Increased efficiency and speed in electronic devices
Original Abstract Submitted
A semiconductor device includes a substrate having a cell array region, a peripheral circuit region, and a connection region between the cell array region and the peripheral circuit region; a device isolation region defining a cell active region on the cell array region, a peripheral active region on the peripheral circuit region, and a dummy active region on the connection region; and a gate structure including a gate electrode extending into the device isolation region on the connection region across the cell active region on the cell array region, wherein the dummy active region is adjacent to the cell active region, and wherein an upper surface of the dummy active region vertically overlapping the gate structure is positioned on a level lower than a level of an upper surface of the cell active region vertically overlapping the gate structure.
