18125411. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

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SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Nam Kyu Cho of Suwon-si (KR)

Seok Hoon Kim of Suwon-si (KR)

Jung Taek Kim of Suwon-si (KR)

Pan Kwi Park of Suwon-si (KR)

Seo Jin Jeong of Suwon-si (KR)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18125411 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The abstract describes a semiconductor device that includes two channel structures spaced apart from each other in one direction. Between these channel structures is a source/drain pattern, which consists of a first interface contacting the first channel structure and a second interface contacting the second channel structure. In a plan view, the source/drain pattern has two opposite side walls in a different direction. The first side wall has a first sloped side wall, a second sloped side wall, and a first horizontal intersection where the two sloped side walls meet. The width of the first interface is different from the width of the second interface in the second direction. Additionally, the distance from the first interface to the first horizontal intersection is greater than the distance from the second interface to the first horizontal intersection in the first direction.

  • The semiconductor device has two channel structures and a source/drain pattern.
  • The source/drain pattern consists of a first interface and a second interface.
  • The source/drain pattern has two opposite side walls with a first sloped side wall, a second sloped side wall, and a first horizontal intersection.
  • The width of the first interface is different from the width of the second interface.
  • The distance from the first interface to the first horizontal intersection is greater than the distance from the second interface to the first horizontal intersection.

Potential Applications:

  • This semiconductor device can be used in integrated circuits and electronic devices.
  • It can be applied in various fields such as telecommunications, computing, and consumer electronics.

Problems Solved:

  • The device provides improved performance and functionality in semiconductor technology.
  • It allows for better control of current flow and enhances the efficiency of electronic devices.

Benefits:

  • The device offers enhanced performance and functionality in semiconductor devices.
  • It improves the overall efficiency and reliability of electronic systems.
  • It enables more precise control of current flow, leading to improved device performance.


Original Abstract Submitted

A semiconductor device includes: first and second channel structures spaced apart from each other in a first direction; and a source/drain pattern, between the first and second channel structures, including a first interface contacting the first channel structure and a second interface contacting the second channel structure, wherein, in a plan view, the source/drain pattern includes first and second side walls opposite to each other in a second direction, the first side wall includes a first sloped side wall, a second sloped side wall, and a first horizontal intersection at which the first and second sloped side walls meet, a width of the first interface is different from a width of the second interface, in the second direction, and a distance from the first interface to the first horizontal intersection is greater than a distance from the second interface to the first horizontal intersection, in the first direction.