18370663. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Hyungjoo Na of Suwon-si (KR)

Woobin Song of Suwon-si (KR)

Jinwook Yang of Suwon-si (KR)

Cheoljin Yun of Suwon-si (KR)

Dongkyu Lee of Suwon-si (KR)

Yoshinao Harada of Suwon-si (KR)

INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18370663 titled 'INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE

Simplified Explanation

The integrated circuit semiconductor device described in the abstract includes a nanosheet structure with gate electrodes, source/drain regions with silicide layers and metal layers, and nanosheet regions between the silicide layers.

• Nanosheet structure with gate electrodes:

   - Nanosheet extends above substrate in a first horizontal direction.
   - Gate electrode extends in a second horizontal direction surrounding the nanosheet.
   - Gate insulating layer separates the gate electrode from the nanosheet.

• Source/drain regions with silicide layers and metal layers:

   - First source/drain region includes first silicide layers, first metal layers, and a first nanosheet region.
   - Second source/drain region includes second silicide layers, second metal layers, and a second nanosheet region.

• Potential Applications:

   - Advanced semiconductor devices
   - High-performance integrated circuits

• Problems Solved:

   - Enhanced performance and efficiency of semiconductor devices
   - Improved scalability and integration of components

• Benefits:

   - Increased speed and reliability of electronic devices
   - Reduction in power consumption
   - Miniaturization of devices

• Potential Commercial Applications:

   - Consumer electronics
   - Telecommunications
   - Automotive industry

• Possible Prior Art:

   - Previous semiconductor device structures with nanosheets and silicide layers

1. 1. 1. Unanswered Questions:
         1. 1. How does the integration of nanosheets improve the performance of the semiconductor device?

The abstract does not provide specific details on how the nanosheet structure enhances the functionality of the integrated circuit.

1. 1. 1. 1. 2. What manufacturing processes are involved in creating the silicide layers and metal layers in the source/drain regions?

The abstract does not mention the specific techniques or methods used to fabricate the silicide and metal layers in the source/drain regions.

Original Abstract Submitted

An integrated circuit semiconductor device includes a nanosheet extending above a substrate in a first horizontal direction, a gate electrode extending in a second horizontal direction while surrounding the nanosheet with a gate insulating layer therebetween, a first source/drain region on a side of the nanosheet, and a second source/drain region on another side of the nanosheet, wherein the first source/drain region includes first silicide layers provided inward from surfaces of the nanosheet, first metal layers surrounding the nanosheet from upper and lower sides of the first silicide layers, and a first nanosheet region provided between the first silicide layers, wherein the second source/drain region includes second silicide layers formed inward from the surfaces of the nanosheet, second metal layers surrounding the nanosheet from upper and lower sides of the second silicide layers, and a second nanosheet region provided between the second silicide layers.