17977420. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TOYOTA JIDOSHA KABUSHIKI KAISHA)
Contents
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
TOYOTA JIDOSHA KABUSHIKI KAISHA
Inventor(s)
Yohei Iwahashi of Nisshin-shi (JP)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 17977420 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The patent application describes a semiconductor device with a specific concentration profile of impurities in its deep layer. The deep layer has a high-concentration region and a low-concentration region.
- The high-concentration region has a peak where the impurity concentration is maximum and includes a region that is not depleted in an off state.
- The low-concentration region is closer to a high-concentration layer and has a smaller gradient of change in impurity concentration than a predetermined value. It is depleted in the off state.
- The distance between the closest position to the base layer in the deep layer and the high concentration peak is shorter than the distance between the high concentration peak and the closest position to the base layer in the low-concentration region.
Potential applications of this technology:
- Semiconductor devices such as transistors and diodes.
- Integrated circuits and microprocessors.
- Power electronics and communication devices.
Problems solved by this technology:
- Improves the performance and efficiency of semiconductor devices.
- Reduces power consumption and heat generation.
- Enhances the overall functionality and reliability of electronic devices.
Benefits of this technology:
- Provides a more efficient and reliable semiconductor device.
- Enables better control of impurity concentration and depletion regions.
- Enhances the performance and functionality of electronic devices.
Original Abstract Submitted
In a semiconductor device, a first deep layer has a high-concentration region and a low-concentration region in a concentration profile of an impurity concentration along a depth direction. The high-concentration region has a high concentration peak at which an impurity concentration is maximum, and includes a region that is not depleted in an off state. The low-concentration region is closer to a high-concentration layer than the high-concentration region, has a region in which a gradient of change in impurity concentration is smaller than a predetermined value, and is depleted in the off state. A first length between a first position closest to a base layer in the first deep layer and a second position of the high concentration peak is shorter than a second length between the second position and a third position closest to the base layer in the low-concentration region.
