18199133. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Jonghoon Baek of Suwon-si (KR)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199133 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The present disclosure is about semiconductor devices, specifically field effect transistors. The semiconductor device described includes active structures on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending across the active structures, a cutting insulation pattern formed between the end portions of the gate structures, and a lower impurity region at the upper portion of the isolation pattern. The lower portion of the cutting insulation pattern has a different shape than the lower portion of the gate structures. The gate structures are formed on the active structures and the isolation pattern, and the lower impurity region contacts at least a portion of the cutting insulation pattern.
- The semiconductor device includes field effect transistors.
- Active structures are present on a substrate.
- An isolation pattern is formed in a trench between the active structures.
- Gate structures extend across the active structures.
- A cutting insulation pattern is formed between the end portions of the gate structures.
- A lower impurity region is located at the upper portion of the isolation pattern.
- The lower portion of the cutting insulation pattern has a different shape than the lower portion of the gate structures.
- The gate structures are formed on the active structures and the isolation pattern.
- The lower impurity region contacts at least a portion of the cutting insulation pattern.
Potential applications of this technology:
- Semiconductor devices can be used in various electronic devices such as computers, smartphones, and tablets.
- Field effect transistors are commonly used in integrated circuits for amplification and switching purposes.
Problems solved by this technology:
- The isolation pattern and cutting insulation pattern help in preventing leakage current between the active structures and gate structures.
- The different shapes of the cutting insulation pattern and gate structures improve the performance and reliability of the semiconductor device.
Benefits of this technology:
- Improved performance and reliability of the semiconductor device.
- Reduced leakage current between active structures and gate structures.
- Enhanced functionality and efficiency of electronic devices that use these semiconductor devices.
Original Abstract Submitted
The present disclosure provides for semiconductor devices including field effect transistors. In some embodiments, the semiconductor device includes active structures extending in a first direction on a substrate, an isolation pattern formed in a trench between the active structures, gate structures extending in a second direction across the active structures, a cutting insulation pattern formed between end portions of the gate structures in the second direction, and a lower impurity region at an upper portion of the isolation pattern. A first shape of a lower portion of the cutting insulation pattern disposed under an uppermost surface of the isolation pattern is different from a second shape of a lower portion of the gate structures disposed under the uppermost surface of the isolation pattern. The gate structures are formed on the active structures and the isolation pattern. The lower impurity region contacts at least a portion of the cutting insulation pattern.
