18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
Contents
- 1 Ion Implantation For Nano-FET
Ion Implantation For Nano-FET
Organization Name
Taiwan Semiconductor Manufacturing Company, Ltd.
Inventor(s)
Chun-Feng Nieh of Hsinchu (TW)
Ion Implantation For Nano-FET - A simplified explanation of the abstract
This abstract first appeared for US patent application 18401780 titled 'Ion Implantation For Nano-FET
Simplified Explanation
A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by an iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.
- Doped channel junctions are placed at the ends of the channel region in a nanoFET transistor.
- The junctions are created through a process of iterative recessing and implanting during the formation of source/drain regions.
- The lateral straggling of the doped channel junctions can be controlled for desired performance.
Potential Applications
This technology can be applied in:
- Nanoelectronics
- Semiconductor industry
- Integrated circuits
Problems Solved
This technology helps in:
- Improving transistor performance
- Enhancing control over channel junctions
- Increasing efficiency of nanosheet transistors
Benefits
The benefits of this technology include:
- Enhanced transistor functionality
- Precise control over channel junctions
- Improved overall performance of nanoFET transistors
Potential Commercial Applications
This technology has potential in:
- Manufacturing of advanced electronic devices
- Semiconductor fabrication industry
- Research and development of nanoelectronics
Possible Prior Art
One possible prior art could be the use of similar techniques in the fabrication of nanoscale transistors in the semiconductor industry.
Unanswered Questions
How does this technology compare to existing methods of creating doped channel junctions in nanoFET transistors?
This article does not provide a direct comparison with existing methods, leaving the reader to wonder about the advantages and disadvantages of this new approach.
What specific parameters can be controlled to achieve the desired lateral straggling of the doped channel junctions?
The article does not delve into the specific parameters or variables that can be manipulated to control the lateral straggling, leaving a gap in understanding for the reader.
Original Abstract Submitted
A nanoFET transistor includes doped channel junctions at either end of a channel region for one or more nanosheets of the nanoFET transistor. The channel junctions are formed by a iterative recessing and implanting process which is performed as recesses are made for the source/drain regions. The implanted doped channel junctions can be controlled to achieve a desired lateral straggling of the doped channel junctions.
