18108089. SEMICONDUCTOR DEVICE simplified abstract (KABUSHIKI KAISHA TOSHIBA)

SEMICONDUCTOR DEVICE

Organization Name

KABUSHIKI KAISHA TOSHIBA

Inventor(s)

Yuto Adachi of Ibo Hyogo (JP)

Yoichi Hori of Himeji Hyogo (JP)

Makoto Mizukami of Ibo Hyogo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18108089 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract consists of multiple layers and electrodes, including a metal layer with a Schottky junction, a conductive member, and a bonding member. Here are some key points to explain the patent/innovation:

• The device includes a first electrode, first and second semiconductor layers of different conductivity types, a metal layer with a Schottky junction, a second electrode, a bonding member, and a conductive member.
• The metal layer is in contact with the first and second semiconductor layers and has a Schottky junction with the first semiconductor layer.
• The conductive member, made of a different material from the metal layer, is located between the second semiconductor layer and the metal layer.
• The area ratio of the conductive member directly under the bonding member is higher than in other regions.

Potential Applications

The technology described in this patent could be applied in various semiconductor devices, such as diodes, transistors, and solar cells.

Problems Solved

This technology helps improve the efficiency and performance of semiconductor devices by optimizing the contact between different layers and electrodes.

Benefits

The benefits of this technology include enhanced conductivity, improved device reliability, and potentially lower production costs.

Potential Commercial Applications

Potential commercial applications of this technology could include the manufacturing of high-performance electronic devices, solar panels, and sensors.

Possible Prior Art

One possible prior art for this technology could be the development of Schottky diodes and metal-semiconductor contacts in semiconductor devices.

How does this technology compare to existing semiconductor devices in terms of performance and efficiency?

This article does not provide a direct comparison with existing semiconductor devices, so it is unclear how this technology stacks up against current solutions.

What specific materials are used in the conductive member and how do they contribute to the overall performance of the device?

The article mentions that the conductive member is made of a different material from the metal layer, but it does not specify the exact materials used or how they impact the device's performance.

Original Abstract Submitted

A semiconductor device includes a first electrode, a first semiconductor layer of a first conductivity type located on the first electrode, a second semiconductor layer of a second conductivity type located on a portion of the first semiconductor layer, a metal layer located on the first and second semiconductor layers, a second electrode located on the metal layer, a bonding member connected to an upper surface of the second electrode, and a conductive member located between the second semiconductor layer and the metal layer. The metal layer has a Schottky junction with the first semiconductor layer. The conductive member is made of a different material from the metal layer. An area ratio of the conductive member in a region directly under the bonding member is higher than an area ratio of the conductive member in a region other than the region directly under the bonding member.