18177313. SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR simplified abstract (KABUSHIKI KAISHA TOSHIBA)
Contents
- 1 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18177313 titled 'SEMICONDUCTOR DEVICE, INVERTER CIRCUIT, DRIVE DEVICE, VEHICLE, AND ELEVATOR
Simplified Explanation
The semiconductor device described in the abstract includes a SiC layer with specific regions and directions, as well as a trench, gate electrode, and various SiC regions with different doping types and orientations.
- SiC layer with first face parallel to first and second directions
- Trench extending in the first direction
- Gate electrode
- n-type first SiC region
- p-type second SiC region between first SiC region and trench
- n-type third SiC region
- p-type fourth SiC region between third SiC region and first face
- n-type fifth SiC region between fourth SiC region and first face
- First face inclined with respect to (0001) face by 0.1 to 8 degrees in a <11-20> direction
- First direction along the <11-20> direction
- Second direction along a <1-100> direction
Potential Applications
This technology could be applied in high-power electronic devices, such as power inverters, converters, and electric vehicles.
Problems Solved
This innovation helps improve the efficiency and performance of semiconductor devices by optimizing the design and doping of SiC regions.
Benefits
The benefits of this technology include enhanced power handling capabilities, reduced energy losses, and increased reliability in high-temperature environments.
Potential Commercial Applications
A potential commercial application for this technology could be in the renewable energy sector, specifically in solar inverters and wind power converters.
Possible Prior Art
One possible prior art for this technology could be the use of SiC layers in power semiconductor devices, but the specific design and doping configurations described in this patent application may be novel.
Unanswered Questions
How does this technology compare to traditional silicon-based semiconductor devices in terms of performance and efficiency?
This article does not directly compare the performance and efficiency of this SiC-based semiconductor device to traditional silicon-based devices. Further research or testing would be needed to provide a comprehensive comparison.
What are the potential challenges or limitations in scaling up the production of these semiconductor devices for mass commercial use?
The article does not address the scalability or mass production challenges of these semiconductor devices. Factors such as cost, manufacturing processes, and supply chain logistics could pose challenges in scaling up production for commercial applications.
Original Abstract Submitted
A semiconductor device of an embodiment includes a SiC layer including a first face parallel to first direction and second direction perpendicular to the first direction, a trench extending in the first direction, a gate electrode, an n-type first SiC region, a p-type second SiC region between the first SiC region and the trench, extending in the second direction, an n-type third SiC region extending in the second direction, and alternately and repeatedly provided with the second SiC region in the first direction, a p-type fourth SiC region between the third SiC region and the first face, an n-type fifth SiC region between the fourth SiC region and the first face. The first face is inclined with respect to a (0001) face by 0.1 to 8 degrees in a <11-20> direction, and the first direction is along the <11-20> direction, and the second direction is along a <1-100> direction.
