18130732. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Organization Name
Inventor(s)
JEONGHYUK Yim of SUWON-SI (KR)
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18130732 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with an active pattern, a channel pattern, and a source/drain pattern. The device also features a gate electrode, a gate contact, and specific layers with varying oxygen concentrations.
- The semiconductor device has an active pattern, a channel pattern, and a source/drain pattern on the substrate.
- The gate electrode is positioned on the channel pattern, and a gate contact is connected to the top surface of the gate electrode.
- The gate contact consists of a capping layer directly contacting the gate electrode's top surface and a metal layer on top.
- Both the capping layer and the metal layer are made of the same metal, with the metal layer having an oxygen concentration ranging from about 2 at % to about 10 at %.
- The capping layer has a maximum oxygen concentration ranging from about 15 at % to about 30 at %.
Potential Applications
The technology described in this patent application could be applied in the development of advanced semiconductor devices for various electronic applications, such as mobile devices, computers, and other consumer electronics.
Problems Solved
This technology addresses the issue of improving the performance and reliability of semiconductor devices by optimizing the materials and structures used in their fabrication process.
Benefits
The benefits of this technology include enhanced device performance, increased efficiency, and improved durability of semiconductor devices, leading to better overall functionality and longevity.
Potential Commercial Applications
The potential commercial applications of this technology could be in the semiconductor industry for the production of high-performance integrated circuits and electronic components.
Possible Prior Art
One possible prior art for this technology could be the use of different metal layers with varying oxygen concentrations in semiconductor devices to improve their performance and reliability.
Unanswered Questions
How does this technology compare to existing semiconductor device structures in terms of performance and reliability?
This article does not provide a direct comparison with existing semiconductor device structures to evaluate the performance and reliability improvements offered by the described technology.
What are the specific electronic applications that could benefit the most from this technology, and why?
The article does not delve into the specific electronic applications that could benefit the most from this technology and the reasons behind their potential advantages.
Original Abstract Submitted
A semiconductor device includes; a substrate including an active pattern, a channel pattern and a source/drain pattern on the active pattern, wherein the channel pattern is connected to the source/drain pattern, a gate electrode on the channel pattern, and a gate contact connected to a top surface of the gate electrode, wherein the gate contact includes a capping layer directly contacting the top surface of the gate electrode and a metal layer on the capping layer, wherein the capping layer and the metal layer include the same metal, a concentration of oxygen in the metal layer ranges from between about 2 at % to about 10 at %, and a maximum concentration of oxygen in the capping layer ranges from between about 15 at % to about 30 at %.
