18167718. MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
Contents
MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING
Organization Name
Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor(s)
Kuo-Cheng Chiang of Hsinchu (TW)
MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18167718 titled 'MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING
Simplified Explanation
The method described in the patent application involves forming nanostructures in different regions of a semiconductor device and depositing various layers to create a functional device. Here are the key points of the innovation:
- Formation of first channel nanostructures and second channel nanostructures in n-type and p-type device regions, respectively
- Deposition of gate dielectric layer, n-type work function metal layer, and cap layer around the nanostructures
- Merging of cap layer in spaces between adjacent nanostructures
- Selective removal of cap layer and n-type work function metal layer in p-type device region
- Deposition of p-type work function metal layer over cap layer in n-type device region
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- Potential Applications
This technology can be applied in the manufacturing of advanced semiconductor devices, such as transistors and integrated circuits.
- Problems Solved
This method helps in improving the performance and efficiency of semiconductor devices by optimizing the structure and materials used in their fabrication.
- Benefits
The benefits of this technology include enhanced device functionality, increased speed, and reduced power consumption in electronic devices.
- Potential Commercial Applications
This innovation has potential applications in the semiconductor industry for developing next-generation electronic devices with improved performance and energy efficiency.
- Possible Prior Art
One possible prior art could be the use of similar nanostructure formation techniques in semiconductor device fabrication processes.
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- Unanswered Questions
- How does this method compare to existing techniques for forming semiconductor devices?
This article does not provide a direct comparison with existing techniques in the semiconductor industry. Further research and analysis are needed to evaluate the advantages and limitations of this method compared to traditional approaches.
- What are the specific materials used in the deposition process, and how do they contribute to the performance of the semiconductor device?
The article mentions the deposition of various layers, but it does not provide detailed information on the specific materials used or their individual roles in enhancing the device performance. Further investigation is required to understand the material properties and their impact on the device functionality.
Original Abstract Submitted
A method for forming a semiconductor device is provided. The method includes forming a plurality of first channel nanostructures and a plurality of second channel nanostructures in an n-type device region and a p-type device region of a substrate, respectively, and sequentially depositing a gate dielectric layer, an n-type work function metal layer, and a cap layer surrounding each of the first and second channel nanostructures. The cap layer merges in first spaces between adjacent first channel nanostructures and merges in second spaces between adjacent second channel nanostructures. The method further includes selectively removing the cap layer and the n-type work function metal layer in the p-type device region, and depositing a p-type work function metal layer over the cap layer in the n-type device region and the gate dielectric layer in the p-type device region. The p-type work function metal layer merges in the second spaces.
