18155392. Gate All Around Transistor Device and Fabrication Methods Thereof simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

From WikiPatents
Jump to navigation Jump to search

Gate All Around Transistor Device and Fabrication Methods Thereof

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Chih-Ching Wang of Kinmen County (TW)

Chia-Ying Su of Hsinchu (TW)

Wen-Hsing Hsieh of Hsinchu City (TW)

Kuan-Lun Cheng of Hsin-Chu (TW)

Chung-Wei Wu of Hsin-Chu County (TW)

Zhiqiang Wu of Hsinchu County (TW)

Gate All Around Transistor Device and Fabrication Methods Thereof - A simplified explanation of the abstract

This abstract first appeared for US patent application 18155392 titled 'Gate All Around Transistor Device and Fabrication Methods Thereof

Simplified Explanation

The present disclosure describes a semiconductor device that includes vertically stacked suspended nanostructures on a substrate, with gate stacks and gate spacers engaging the nanostructures. The middle portion of the first suspended nanostructures has a larger thickness than the middle portion of the second suspended nanostructures.

  • The semiconductor device includes vertically stacked suspended nanostructures on a substrate.
  • The nanostructures are divided into two groups, with the first group having a larger thickness in the middle portion compared to the second group.
  • Each group of nanostructures is engaged by a gate stack and a gate spacer.
  • The device allows for precise control and manipulation of the nanostructures due to the difference in thickness between the two groups.

Potential Applications

  • This technology can be used in the development of advanced semiconductor devices.
  • It may find applications in the fields of electronics, telecommunications, and computing.

Problems Solved

  • The technology solves the problem of precise control and manipulation of suspended nanostructures in a semiconductor device.
  • It addresses the need for improved performance and functionality in semiconductor devices.

Benefits

  • The use of vertically stacked suspended nanostructures allows for increased device density and improved performance.
  • The difference in thickness between the two groups of nanostructures provides enhanced control and manipulation capabilities.
  • The technology enables the development of more advanced and efficient semiconductor devices.


Original Abstract Submitted

Embodiments of the present disclosure includes a semiconductor device. The semiconductor device includes first suspended nanostructures vertically stacked over one another and disposed on a substrate, a first gate stack engaging the first suspended nanostructures, a first gate spacer disposed on sidewalls of the first gate stack, second suspended nanostructures vertically stacked over one another and disposed on the substrate, a second gate stack engaging the second suspended nanostructures, and a second gate spacer disposed on sidewalls of the second gate stack. A middle portion of the first suspended nanostructures has a first thickness measured in a direction perpendicular to a top surface of the substrate. A middle portion of the second suspended nanostructures has a second thickness measured in the direction. The second thickness is smaller than the first thickness.

Retrieved from "http://wikipatents.org/index.php?title=18155392._Gate_All_Around_Transistor_Device_and_Fabrication_Methods_Thereof_simplified_abstract_(Taiwan_Semiconductor_Manufacturing_Co.,_Ltd.)&oldid=23663"