18102204. METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
Mirco Cantoro of Hwaseong-si (KR)
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18102204 titled 'METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
Simplified Explanation
The patent application describes a semiconductor device with multiple active patterns and gate structures, as well as a gate separation structure and connecting spacer.
- The device includes first and second active patterns, separated by a field insulating film.
- It has first and second gate structures, each intersecting one of the active patterns, with gate electrodes and gate spacers.
- A gate separation structure is present on the field insulating film between the gate structures, consisting of a gate separation filling film on a gate separation liner.
- A connecting spacer protrudes from the top surface of the field insulating film and contacts the gate separation liner.
- The gate separation liner extends along the top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.
Potential applications of this technology:
- Semiconductor manufacturing industry
- Electronics industry
- Integrated circuit design and production
Problems solved by this technology:
- Provides a structure for separating gate structures in a semiconductor device.
- Helps to prevent interference or cross-talk between gate structures.
- Improves the performance and reliability of the semiconductor device.
Benefits of this technology:
- Enhanced functionality and efficiency of semiconductor devices.
- Improved signal integrity and reduced interference.
- Enables the production of more advanced and compact integrated circuits.
Original Abstract Submitted
A semiconductor device includes first and second active patterns, a field insulating film between the first and second active patterns, a first gate structure intersecting the first active pattern and including a first gate electrode and a first gate spacer, a second gate structure intersecting the second active pattern and including a second gate electrode and a second gate spacer, a gate separation structure on the field insulating film between the first and second gate structures, the gate separation structure including a gate separation filling film on a gate separation liner, and a connecting spacer between the gate separation structure and the field insulating film, the connecting spacer protruding from a top surface of the field insulating film, and the gate separation liner contacting the connecting spacer and extending along a top surface and sidewalls of the connecting spacer and along the top surface of the field insulating film.
