18093877. INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

Seungmin Song of Hwaseong-si (KR)

Bongseok Suh of Seoul (KR)

Junggil Yang of Hwaseong-si (KR)

Soojin Jeong of Bucheon-si (KR)

INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18093877 titled 'INTEGRATED CIRCUITS AND METHODS OF MANUFACTURING THE SAME

Simplified Explanation

The abstract describes an integrated circuit that includes a fin active region, semiconductor patterns, a gate electrode, a spacer structure, and a source/drain region. The uppermost semiconductor pattern has a narrower bottom portion compared to its top portion.

• The integrated circuit includes a fin active region protruding from a substrate.
• A plurality of semiconductor patterns are located on the upper surface of the fin active region.
• The gate electrode surrounds the semiconductor patterns and consists of a main gate part on the topmost semiconductor pattern and sub gate parts between the other semiconductor patterns.
• A spacer structure is present on the sidewall of the main gate part.
• The source/drain region is connected to the semiconductor patterns and contacts the bottom surface of the spacer structure.
• The top portion of the uppermost semiconductor pattern has a wider width.
• The bottom portion of the uppermost semiconductor pattern has a narrower width.

Potential Applications

• This integrated circuit design can be used in various electronic devices such as smartphones, tablets, and computers.
• It can be applied in the manufacturing of high-performance processors and memory chips.

Problems Solved

• The design addresses the need for compact and efficient integrated circuits.
• It solves the challenge of optimizing the space utilization within the circuit while maintaining performance.

Benefits

• The integrated circuit design allows for improved performance and efficiency.
• It enables the production of smaller and more powerful electronic devices.
• The design offers enhanced integration capabilities and can support advanced functionalities.

Original Abstract Submitted

An integrated circuit includes a fin active region protruding from a substrate, a plurality of semiconductor patterns on an upper surface of the fin active region, a gate electrode that surrounds the plurality of semiconductor patterns and includes a main gate part on an uppermost one of the plurality of semiconductor patterns and sub gate parts between the plurality of semiconductor patterns, a spacer structure on a sidewall of the main gate part, and a source/drain region at a side of the gate electrode. The source/drain region is connected to the plurality of semiconductor patterns and contacts a bottom surface of the spacer structure. A top portion of the uppermost semiconductor pattern has a first width. A bottom portion of the uppermost semiconductor pattern has a second width smaller than the first width.