17958290. WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS simplified abstract (Intel Corporation)

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WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS

Organization Name

Intel Corporation

Inventor(s)

Leonard P. Guler of Hillsboro OR (US)

Sukru Yemenicioglu of Portland OR (US)

Shengsi Liu of Portland OR (US)

Shao Ming Koh of Tigard OR (US)

Tahir Ghani of Portland OR (US)

WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS - A simplified explanation of the abstract

This abstract first appeared for US patent application 17958290 titled 'WALL COUPLED WITH TWO STACKS OF NANORIBBONS TO ELECTRICAL ISOLATE GATE METALS

Simplified Explanation

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for creating a wall within a forkFET transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. In embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. Other embodiments may be described and/or claimed.

  • Wall created within a forkFET transistor structure
  • Adjacent to first and second stacks of nanoribbons
  • Extends beyond the top of the first stack to isolate gate metals
  • Enables separate control of nanoribbon stacks

Potential Applications

This technology could be applied in:

  • Advanced semiconductor devices
  • Nanoelectronics
  • High-performance computing

Problems Solved

  • Improved control and isolation of nanoribbon stacks
  • Enhanced performance of transistor structures
  • Increased efficiency in electronic devices

Benefits

  • Higher precision in transistor operation
  • Enhanced functionality in nanoelectronics
  • Potential for faster computing speeds

Potential Commercial Applications

  • Semiconductor industry
  • Electronics manufacturing
  • Research and development in nanotechnology

Possible Prior Art

One possible prior art could be the use of nanoribbons in transistor structures for improved performance and efficiency. However, the specific implementation of a wall within a forkFET transistor structure to isolate gate metals may be a novel aspect of this technology.

Unanswered Questions

How does this technology compare to traditional transistor structures?

The article does not provide a direct comparison between this technology and traditional transistor structures in terms of performance, efficiency, and scalability.

What are the potential challenges in scaling up this technology for mass production?

The article does not address the potential challenges or limitations in scaling up this technology for commercial production, such as manufacturing costs, scalability issues, or integration with existing semiconductor processes.


Original Abstract Submitted

Embodiments described herein may be related to apparatuses, processes, systems, and/or techniques for techniques for creating a wall within a forkFET transistor structure, where the wall is adjacent to a first stack of nanoribbons on a first side of the wall and a second stack of nanoribbons on a second side of the wall opposite the first side of the wall. In embodiments, the wall extends beyond the top of the first stack of nanoribbons and electrically isolates a first gate metal coupled with the first stack of nanoribbons and a second gate metal coupled with the second stack of nanoribbons from each other. Other embodiments may be described and/or claimed.

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