18151761. NANO-FET SEMICONDUCTOR DEVICE AND METHOD OF FORMING simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
NANO-FET SEMICONDUCTOR DEVICE AND METHOD OF FORMING
Organization Name
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Inventor(s)
Chia-Hsuan Wang of Hsinchu (TW)
Chen-Fong Tsai of Hsinchu (TW)
NANO-FET SEMICONDUCTOR DEVICE AND METHOD OF FORMING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18151761 titled 'NANO-FET SEMICONDUCTOR DEVICE AND METHOD OF FORMING
Simplified Explanation
The abstract describes a patent application for nanostructure devices and methods of forming them. The innovation involves a treatment process that expands a sidewall spacer material and closes a seam in the material after deposition. This is achieved through oxygen plasma treatment, which not only expands the material but also crosslinks the open seam to form a closed seam. This treatment process results in a lower k-value (a measure of dielectric constant) and decreased density of the material.
- Nanostructure devices and methods of forming them
- Treatment process to expand sidewall spacer material and close a seam
- Oxygen plasma treatment used to expand the material and crosslink the seam
- Results in lower k-value and decreased density of the material
Potential Applications
The technology described in this patent application has potential applications in various fields, including:
- Semiconductor industry: The nanostructure devices and methods can be used in the fabrication of advanced semiconductor devices, such as transistors and integrated circuits.
- Nanoelectronics: The lower k-value and decreased density of the material can enhance the performance and efficiency of nanoelectronic devices.
- Optoelectronics: The treatment process can be applied to nanostructures used in optoelectronic devices, such as light-emitting diodes (LEDs) and photodetectors, improving their functionality.
Problems Solved
The technology addresses several problems in the fabrication of nanostructure devices, including:
- Seam formation: The treatment process effectively closes open seams in the sidewall spacer material, ensuring the structural integrity of the nanostructures.
- High k-value: The lower k-value achieved through the treatment process reduces the dielectric constant of the material, minimizing unwanted capacitance and improving device performance.
- High density: The decreased density of the material helps to reduce the overall weight and size of the nanostructure devices, making them more compact and portable.
Benefits
The technology offers several benefits for nanostructure devices and their fabrication:
- Improved structural integrity: The closed seams in the sidewall spacer material enhance the durability and reliability of the nanostructures.
- Enhanced device performance: The lower k-value of the material reduces unwanted capacitance, leading to improved signal transmission and overall device performance.
- Compact and lightweight design: The decreased density of the material allows for smaller and lighter nanostructure devices, making them more suitable for portable applications.
Original Abstract Submitted
Embodiments include nanostructure devices and methods of forming nanostructure devices which include a treatment process to expand a sidewall spacer material to close a seam in the sidewall spacer material after deposition. The treatment process includes oxygen plasma treatment to expand the sidewall spacer material and crosslink the open seam to form a closed seam, lower k-value, and decrease density.
