18453529. SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
- 1 SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Original Abstract Submitted
SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR
Organization Name
Inventor(s)
Joongwon Jeon of Suwon-si (KR)
SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR - A simplified explanation of the abstract
This abstract first appeared for US patent application 18453529 titled 'SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR
Simplified Explanation
The semiconductor device described in the abstract includes a substrate with two row regions, each with a nanosheet structure containing active segments of different widths. The second nanosheet structure is symmetrical to the first nanosheet structure. Transition regions between active segments have specific angles with respect to the first direction.
- Substrate with first and second row regions
- Nanosheet structures with active segments of different widths
- Symmetrical arrangement of nanosheet structures
- Transition regions with specific angles
Potential Applications
This technology could be applied in:
- Advanced semiconductor devices
- High-performance electronic devices
- Nanotechnology research
Problems Solved
This technology helps to:
- Improve performance of semiconductor devices
- Enhance efficiency of electronic components
- Enable more precise control at nanoscale levels
Benefits
The benefits of this technology include:
- Increased speed and efficiency of electronic devices
- Enhanced precision in semiconductor manufacturing
- Potential for smaller and more powerful devices
Potential Commercial Applications
The potential commercial applications of this technology could be:
- Semiconductor industry
- Electronics manufacturing companies
- Research institutions
Possible Prior Art
One possible prior art could be the development of nanosheet structures with active segments of varying widths in semiconductor devices.
Unanswered Questions
How does this technology compare to traditional semiconductor devices with uniform nanosheet structures?
This technology offers the advantage of having active segments with different widths, potentially leading to improved performance and efficiency compared to traditional uniform nanosheet structures.
What impact could this technology have on the future of nanotechnology research?
This technology could pave the way for more advanced research in nanotechnology, allowing for greater control and precision at the nanoscale level, leading to innovative applications in various industries.
Original Abstract Submitted
A semiconductor device may include a substrate including a first and a second row region, wherein a surface of the substrate is disposed in a first direction and a second direction perpendicular to the first direction, a first nanosheet structure on the first row region and including active segments disposed in the first direction, and the active segments having different widths in the second direction; and a second nanosheet structure on the second row region, the second nanosheet structure spaced apart from the first nanosheet structure in the second direction, and wherein the second nanosheet structure is symmetrical to the first nanosheet structure in the first direction. In a plan view, in each of the first and second nanosheet structures, transition regions between adjacent ones of the active segments have one of a same first angle and a second angle with respect to the first direction.
