18336477. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
Contents
SEMICONDUCTOR DEVICE
Organization Name
Inventor(s)
SEMICONDUCTOR DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18336477 titled 'SEMICONDUCTOR DEVICE
Simplified Explanation
The semiconductor device described in the patent application includes a substrate with two regions, a first device in the first region, a second device in the second region, a front side interconnection structure on the front side of the substrate, and a back side buried interconnection structure on the back side of the substrate.
- The front side interconnection structure consists of multiple interconnection layers that are electrically connected to the first and second devices on the front side of the substrate.
- The back side buried interconnection structure is located adjacent to the back side of the substrate and includes a buried insulating layer and a buried conductive layer within the insulating layer. This structure is recessed from the back side of the substrate towards the front side.
- The back side buried interconnection structure can be located in either the first region or the second region of the substrate.
Potential applications of this technology:
- Integrated circuits: The semiconductor device can be used in the fabrication of integrated circuits, allowing for efficient interconnection between different devices on the substrate.
- Power electronics: The back side buried interconnection structure can enable improved power distribution and heat dissipation in power electronic devices.
- Sensor devices: The interconnection structure can be utilized in the development of sensor devices, enabling efficient signal processing and data transmission.
Problems solved by this technology:
- Interconnection efficiency: The front side and back side interconnection structures improve the efficiency of interconnecting devices on the substrate, reducing signal loss and improving overall device performance.
- Heat dissipation: The back side buried interconnection structure helps in dissipating heat generated by the devices, preventing overheating and improving device reliability.
- Space optimization: The buried interconnection structure allows for more compact device designs, optimizing the use of space on the substrate.
Benefits of this technology:
- Improved performance: The efficient interconnection structure enhances the performance of the semiconductor device, enabling faster data transmission and improved signal integrity.
- Enhanced reliability: The back side buried interconnection structure improves heat dissipation, reducing the risk of device failure due to overheating.
- Space-saving design: The buried interconnection structure allows for more compact device designs, enabling the integration of multiple devices on a smaller substrate area.
Original Abstract Submitted
A semiconductor device, includes: a substrate having a first region and a second region; a first device on the substrate, in the first region; a second device on the substrate, in the second region; a front side interconnection structure including a plurality of interconnection layers electrically connected to the first device and the second device, on a front side of the substrate; and a back side buried interconnection structure adjacently to a back side of the substrate opposing the front side. The back side buried interconnection structure includes a back side buried insulating layer in a trench recessed from a back side of the substrate toward the front side of the substrate, and a back side buried conductive layer in the back side buried insulating layer. The back side buried interconnection structure is located in the first region or the second region.
