18199115. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
Contents
- 1 INTEGRATED CIRCUIT DEVICE
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
INTEGRATED CIRCUIT DEVICE
Organization Name
Inventor(s)
INTEGRATED CIRCUIT DEVICE - A simplified explanation of the abstract
This abstract first appeared for US patent application 18199115 titled 'INTEGRATED CIRCUIT DEVICE
Simplified Explanation
The abstract describes an integrated circuit (IC) device with specific gate dielectric film configurations.
- Channel region on a substrate
- Gate on the channel region
- First gate dielectric film with two portions - one in contact with the channel region and the other apart from it
- Second gate dielectric film with a portion in contact with the first gate dielectric film at a vertical level farther from the substrate than the gate's top surface
Potential Applications
The technology described in this patent application could be applied in the following areas:
- Semiconductor manufacturing
- Electronics industry
- Integrated circuit design
Problems Solved
This technology addresses the following issues:
- Improving performance and efficiency of integrated circuits
- Enhancing gate dielectric film configurations for better functionality
- Optimizing the design of IC devices for improved operation
Benefits
The benefits of this technology include:
- Increased reliability of IC devices
- Enhanced electrical properties
- Improved overall performance of integrated circuits
Potential Commercial Applications
With its innovative gate dielectric film configurations, this technology could be utilized in various commercial applications such as:
- Mobile devices
- Computers and laptops
- Automotive electronics
Possible Prior Art
One possible prior art related to this technology could be the development of gate dielectric films in semiconductor devices. Researchers and engineers have been exploring different configurations to enhance the performance of IC devices.
Unanswered Questions
How does this technology compare to existing gate dielectric film configurations in terms of performance and efficiency?
The article does not provide a direct comparison with other gate dielectric film configurations to evaluate the advantages and disadvantages of this new approach.
What are the specific manufacturing processes involved in implementing these gate dielectric film configurations in IC devices?
The article does not delve into the detailed manufacturing processes required to integrate these specific gate dielectric film configurations into IC devices.
Original Abstract Submitted
An integrated circuit (IC) device is provided. The IC device includes: a channel region on a substrate; a gate on the channel region; a first gate dielectric film including a first portion and a second portion, the first portion being in contact with the channel region between the channel region and the gate, and the second portion being apart from the channel region; and a second gate dielectric film including a third portion, the third portion being in contact with the second portion of the first gate dielectric film at a vertical level farther from the substrate than a top surface of the gate.
