18466223. SEMICONDUCTOR ELEMENT WITH SHIELDING simplified abstract (Robert Bosch GmbH)
Contents
- 1 SEMICONDUCTOR ELEMENT WITH SHIELDING
- 1.1 Organization Name
- 1.2 Inventor(s)
- 1.3 SEMICONDUCTOR ELEMENT WITH SHIELDING - A simplified explanation of the abstract
- 1.4 Simplified Explanation
- 1.5 Potential Applications
- 1.6 Problems Solved
- 1.7 Benefits
- 1.8 Potential Commercial Applications
- 1.9 Possible Prior Art
- 1.10 Unanswered Questions
- 1.11 Original Abstract Submitted
SEMICONDUCTOR ELEMENT WITH SHIELDING
Organization Name
Inventor(s)
Christian Huber of Ludwigsburg (DE)
Jens Baringhaus of Sindelfingen (DE)
Kevin Dannecker of Reutlingen (DE)
Muhammad Alshahed of Stuttgart (DE)
SEMICONDUCTOR ELEMENT WITH SHIELDING - A simplified explanation of the abstract
This abstract first appeared for US patent application 18466223 titled 'SEMICONDUCTOR ELEMENT WITH SHIELDING
Simplified Explanation
The semiconductor component described in the abstract is a trench MISFET designed with a substrate made of gallium nitride (GaN), a drift layer, a barrier layer, and a source region with a gate trench extending into the barrier layer.
- The semiconductor component is designed as a trench MISFET.
- The substrate is made of gallium nitride (GaN).
- The source region includes a gate trench that extends into the underlying barrier layer.
Potential Applications
The technology can be applied in power electronics, RF amplifiers, and high-frequency applications.
Problems Solved
Improved efficiency and performance in power electronics and RF applications.
Benefits
Enhanced power handling capabilities, reduced energy losses, and improved overall device performance.
Potential Commercial Applications
- "Gallium Nitride Trench MISFET Technology for Power Electronics and RF Applications"
Possible Prior Art
There may be prior art related to gallium nitride-based semiconductor components and trench MISFET designs.
Unanswered Questions
How does the gate trench design impact the performance of the semiconductor component?
The gate trench design plays a crucial role in controlling the flow of current in the device, but the specific impact on performance needs further investigation.
What are the potential challenges in scaling up the production of these semiconductor components?
Scaling up production may face challenges related to cost, manufacturing processes, and ensuring consistent quality control.
Original Abstract Submitted
A semiconductor component that is designed as a trench MISFET. The semiconductor component includes a substrate made of gallium nitride (GaN), a drift layer situated thereon, a barrier layer, and a source region situated thereabove. The source region includes a gate trench that extends from the source region into the underlying barrier layer.
