18255425. SEMICONDUCTOR DEVICE simplified abstract (TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION)

SEMICONDUCTOR DEVICE

Organization Name

TOSHIBA ELECTRONIC DEVICES & STORAGE CORPORATION

Inventor(s)

Toshiro Hiramoto of Tokyo (JP)

Takuya Saraya of Tokyo (JP)

Kiyoshi Takeuchi of Tokyo (JP)

Kazuo Itou of Tokyo (JP)

Toshihiko Takakura of Tokyo (JP)

Munetoshi Fukui of Tokyo (JP)

Shinichi Suzuki of Tokyo (JP)

Katsumi Satoh of Tokyo (JP)

Tomoko Matsudai of Tokyo (JP)

SEMICONDUCTOR DEVICE - A simplified explanation of the abstract

This abstract first appeared for US patent application 18255425 titled 'SEMICONDUCTOR DEVICE

Simplified Explanation

The semiconductor device described in the abstract aims to reduce switching loss at turn-off while suppressing conduction loss. The device includes various layers and electrodes to achieve this goal, with specific configurations to optimize performance.

• The device consists of an emitter p layer, a collector p layer, a drift layer, an emitter electrode, a collector electrode, an emitter-side gate electrode, an emitter n layer, a collector p layer, a collector-side gate electrode, and a collector n layer.
• The total length of the first facing region of the emitter-side gate electrode in the gate width direction facing an emitter layer p via a gate insulating film is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode facing an impurity layer via a collector-side gate insulating film.

Potential Applications

The technology could be applied in power electronics, such as in inverters, converters, and motor drives, to improve efficiency and performance.

Problems Solved

This innovation addresses the challenge of reducing switching loss during turn-off in semiconductor devices, which is crucial for enhancing overall efficiency and minimizing energy wastage.

Benefits

The benefits of this technology include improved energy efficiency, reduced heat generation, and enhanced overall performance of semiconductor devices.

Potential Commercial Applications

The technology could find applications in various industries such as automotive, renewable energy, industrial automation, and consumer electronics, where power electronics play a critical role in system operation and efficiency.

Possible Prior Art

Prior art in the field of power semiconductor devices may include similar attempts to optimize switching and conduction losses, but the specific configuration and design described in this patent application may offer unique advantages.

How does this technology compare to existing solutions in terms of cost-effectiveness?

The cost-effectiveness of implementing this technology compared to other solutions is not explicitly addressed in the abstract. Further analysis or comparative studies would be needed to evaluate this aspect.

What are the potential limitations or challenges in scaling up this technology for mass production?

The abstract does not mention scalability or mass production considerations for this semiconductor device. Understanding the challenges and limitations in scaling up production could be crucial for its commercial viability.

Original Abstract Submitted

Provided is a semiconductor device capable of reducing switching loss at turn-off while suppressing conduction loss. An emitter p layer , a collector p layer , a drift layer , an emitter electrode , a collector electrode , an emitter-side gate electrode , an emitter n layer , a collector p layer , a collector-side gate electrode , and a collector n layer configure a semiconductor device , and a total length of a first facing region of the emitter-side gate electrode in a gate width direction facing an emitter layer p via a gate insulating film is longer than the total length in the gate width direction of a second facing region of a collector-side gate electrode facing an impurity layer via a collector-side gate insulating film