Category:H01L29/775
H01L29/775 – IPC Classification Breakdown
H01L29/775 is a specific classification code under the International Patent Classification (IPC) system, which categorizes patents and patent applications according to the different areas of technology they pertain to. This classification falls under the broader category of H01L which relates to semiconductor devices; electric solid state devices not otherwise provided for. Here is a detailed breakdown of the code H01L29/775:
- H01L: This symbolizes the section of the classification dedicated to semiconductor devices; electric solid state devices not otherwise provided for.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29/775: This represents the most specific classification, indicating semiconductor devices with insulated gate field-effect transistors.
- H01L29/77: This further narrows down the category to semiconductor devices with channel region and gate electrodes.
- H01L29: This is a subgroup within H01L, focusing specifically on semiconductor devices in general.
Applications of H01L29/775
The H01L29/775 classification typically encompasses patents related to the structure, manufacturing processes, and applications of insulated gate field-effect transistors (IGFETs), including:
- Design innovations in gate dielectrics, channel engineering, and source/drain configurations.
- Developments in semiconductor materials and doping techniques for performance enhancement.
- Advanced fabrication methods to improve transistor reliability, scalability, and power efficiency.
Relevance in Modern Technology
Transistors classified under H01L29/775 are crucial in modern electronic devices, playing a pivotal role in the miniaturization and performance improvement of integrated circuits used in:
- Computers and smartphones
- High-speed networking and communication devices
- Automotive electronics and sensors
- Renewable energy systems and power management
Category Links
Pages in category "H01L29/775"
The following 200 pages are in this category, out of 357 total.
(previous page) (next page)1
- 17808124. SUBTRACTIVE SOURCE DRAIN CONTACT FOR STACKED DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17808566. COMMON SELF ALIGNED GATE CONTACT FOR STACKED TRANSISTOR STRUCTURES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17809099. HIGH-VOLTAGE SEMICONDUCTOR DEVICES AND METHODS OF FORMATION simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17815187. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17818933. 2D-MATERIAL GATE-ALL-AROUND COMPLEMENTARY FET INTEGRATION simplified abstract (QUALCOMM Incorporated)
- 17827779. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17836399. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17837613. SEMICONDUCTOR DEVICE WITH DIELECTRIC LINERS ON GATE REFILL METAL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 17838646. SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURCE AND DRAIN simplified abstract (Intel Corporation)
- 17846948. MULTILAYER GATE ISOLATION STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17847075. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17848406. SEMICONDUCTOR DEVICES AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849725. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17849739. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850475. CPP-AGNOSTIC SOURCE-DRAIN CONTACT FORMATION FOR GATE-ALL-AROUND DEVICES WITH DIELECTRIC ISOLATION simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17850769. FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING COMMON METAL GATES AND HAVING GATE DIELECTRICS WITH AN OPPOSITE POLARITY DIPOLE LAYER simplified abstract (Intel Corporation)
- 17850778. INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE POWER STAPLE simplified abstract (Intel Corporation)
- 17850811. INTEGRATED CIRCUIT WITH BOTTOM DIELECTRIC INSULATORS AND FIN SIDEWALL SPACERS FOR REDUCING SOURCE/DRAIN LEAKAGE CURRENTS simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17850845. INTEGRATED CIRCUIT DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17851979. INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES simplified abstract (Intel Corporation)
- 17851985. INTEGRATED CIRCUIT STRUCTURES HAVING MEMORY WITH BACKSIDE POWER DELIVERY simplified abstract (Intel Corporation)
- 17852658. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17859242. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17864938. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17868401. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 17879134. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17886689. STRUCTURE AND FORMATION METHOD OF SEMICONDUCTOR DEVICE WITH ISOLATION STRUCTURE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886753. SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886797. SEMICONDUCTOR DEVICE AND METHODS OF FABRICATION THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886876. SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17886921. SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887306. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887487. SEMICONDUCTOR DEVICE STRUCTURE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 17887600. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 17894097. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17894169. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896353. SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17896523. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 17897648. SEMICONDUCTOR PACKAGES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 17899111. BACKSIDE CONTACTS FOR CELL HEIGHT SCALING simplified abstract (International Business Machines Corporation)
- 17902111. MULTI BRIDGE CHANNEL FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17931319. DIFFERENT DIMENSIONS ACROSS ACTIVE REGION FOR STRONGER VIA TO BACKSIDE POWER RAIL simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17931982. FIELD EFFECT TRANSISTOR WITH CHANNEL CAPPING LAYER simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17932557. HETEROGENEOUS GATE ALL AROUND DIELECTRIC THICKNESS simplified abstract (International Business Machines Corporation)
- 17932677. DUAL DIELECTRIC STRESSORS simplified abstract (International Business Machines Corporation)
- 17933861. SELF-ALIGNED BACKSIDE CONTACT WITH DEEP TRENCH LAST FLOW simplified abstract (International Business Machines Corporation)
- 17933882. COMPOSITE NANOSHEET TUNNEL TRANSISTORS simplified abstract (International Business Machines Corporation)
- 17936416. VERTICAL INVERTER FORMATION ON STACKED FIELD EFFECT TRANSISTOR (SFET) simplified abstract (International Business Machines Corporation)
- 17936417. MONOLITHIC STACKED FIELD EFFECT TRANSISTOR (SFET) WITH DUAL MIDDLE DIELECTRIC ISOLATION (MDI) SEPARATION simplified abstract (International Business Machines Corporation)
- 17936604. FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL simplified abstract (International Business Machines Corporation)
- 17936825. METHOD AND STRUCTURE OF FORMING BACKSIDE GATE TIE-DOWN simplified abstract (International Business Machines Corporation)
- 17936934. METAL GATE CUT FORMED AFTER SOURCE AND DRAIN CONTACTS simplified abstract (Intel Corporation)
- 17937955. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17937967. FIELD EFFECT TRANSISTOR WITH BACKSIDE SOURCE/DRAIN simplified abstract (International Business Machines Corporation)
- 17943602. BACKSIDE CONTACT WITH FULL WRAP-AROUND CONTACT simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17943751. HEIGHT CONTROL IN NANOSHEET DEVICES simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 17945275. STRUCTURE HAVING ENHANCED GATE RESISTANCE simplified abstract (International Business Machines Corporation)
- 17945422. MULTI-VT SOLUTION FOR REPLACEMENT METAL GATE BONDED STACKED FET simplified abstract (International Business Machines Corporation)
- 17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 17945888. HIGH PERFORMANCE 3D COMPACT TRANSISTOR ARCHITECTURE simplified abstract (TOKYO ELECTRON LIMITED)
- 17946002. DIODES IN NANOSHEET TECHNOLOGY simplified abstract (International Business Machines Corporation)
- 17946017. COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR (CMOS) APPARATUS WITH SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17946821. SELF-ALIGNED BACKSIDE CONTACT simplified abstract (International Business Machines Corporation)
- 17955677. COMPOSITE CONTACT BETWEEN BACKSIDE POWER ELEMENT AND SOURCE/DRAIN REGION simplified abstract (International Business Machines Corporation)
- 17956296. TECHNOLOGIES FOR PEROVSKITE TRANSISTORS simplified abstract (Intel Corporation)
- 17957194. HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE simplified abstract (International Business Machines Corporation)
- 17957821. GATE CUT, WITH ASYMMETRICAL CHANNEL TO GATE CUT SPACING simplified abstract (Intel Corporation)
- 17957887. STACKED SOURCE OR DRAIN CONTACT FLYOVER simplified abstract (Intel Corporation)
- 17958293. EPITAXIAL STRUCTURE AND GATE METAL STRUCTURES WITH A PLANAR TOP SURFACE simplified abstract (Intel Corporation)
- 17961281. Backside BPR/BSPDN Intergration with Backside Local Interconnect. simplified abstract (International Business Machines Corporation)
- 17962222. HIGH PERFORMANCE 3D CHANNELS WITH UPSILON NANOSHEETS simplified abstract (Tokyo Electron Limited)
- 17962233. 3D NANOSHEET STACK WITH DUAL SELECTIVE CHANNEL REMOVAL OF HIGH MOBILITY CHANNELS simplified abstract (Tokyo Electron Limited)
- 17962235. SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THEREOF simplified abstract (Tokyo Electron Limited)
- 17963031. SEMICONDUCTOR STRUCTURE WITH CONDUCTIVE SPACER IN SHALLOW TRENCH ISOLATION REGION simplified abstract (International Business Machines Corporation)
- 17969260. Local VDD And VSS Power Supply Through Dummy Gates with Gate Tie-Downs and Associated Benefits simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18045181. FORMING SOURCE/DRAIN REGION IN STACKED FET STRUCTURE simplified abstract (International Business Machines Corporation)
- 18046656. SEMICONDUCTOR DEVICE INCLUDING PLURALITY OF CHANNEL LAYERS simplified abstract (Samsung Electronics Co., Ltd.)
- 18049297. SOURCE/DRAIN CONTACT AT TIGHT CELL BOUNDARY simplified abstract (INTERNATIONAL BUSINESS MACHINES CORPORATION)
- 18053157. SEMICONDUCTOR DEVICE MANUFACTURING METHOD simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18077281. INTEGRATED CIRCUIT DEVICE INCLUDING GATE CONTACT simplified abstract (Samsung Electronics Co., Ltd.)
- 18081855. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18088890. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18097249. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18097263. SEMICONDUCTOR DEVICE STRUCTURE INCLUDING FORKSHEET TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18099236. SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18100872. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18103897. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18106812. SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18110950. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18113715. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18119037. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18121869. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18125411. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18125870. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18126298. METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18128061. Epitaxial Structures In Semiconductor Devices simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18128417. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18130732. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18138877. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18139985. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18140905. INTEGRATED CIRCUIT DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18150524. Transistor Source/Drain Regions and Methods of Forming the Same simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152169. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18152775. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18152938. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18153646. SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154275. SEMICONDUCTOR DEVICE WITH STRAINED CHANNELS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18154614. SEMICONDUCTOR STRUCTURE WITH NITRIDED INNER SPACERS AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18157054. METHOD OF MODULATING MULTI-GATE DEVICE CHANNELS AND STRUCTURES THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18159200. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18159625. MULTI-GATE DEVICE INNER SPACER AND METHODS THEREOF simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18160341. INTEGRATED CIRCUIT DEVICES INCLUDING A BACK SIDE POWER DISTRIBUTION NETWORK STRUCTURE AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163573. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18163857. FIELD EFFECT TRANSISTOR WITH GATE ISOLATION STRUCTURE AND METHOD simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18165639. NANOSHEET DEVICES AND METHODS OF FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18167169. TRANSISTOR STRUCTURE WITH GATE ISOLATION STRUCTURES AND METHOD OF FABRICATING THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18167718. MULTIPLE GATE PATTERNING METHODS TOWARDS FUTURE NANOSHEET SCALING simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18169628. SEMICONDUCTOR STRUCTURE WITH HIGH INTEGRATION DENSITY AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18170104. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18170259. SEMICONDUCTOR DEVICE simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18172703. SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18173847. INTEGRATED CIRCUIT DEVICES INCLUDING STACKED TRANSISTORS AND METHODS OF FORMING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18176170. SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18177409. Semiconductor Structures With Reduced Parasitic Capacitance And Methods For Forming The Same simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18177909. SEMICONDUCTOR STRUCTURE WITH DIELECTRIC SPACER AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18184901. INTEGRATED CIRCUIT DEVICE INCLUDING INTEGRATED INSULATOR AND METHODS OF FABRICATION THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18185941. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18188314. Crystallization of High-K Dielectric Layer simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18188399. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18190444. INTEGRATED CIRCUIT STRUCTURE AND METHOD FOR FABRICATING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18190837. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18193758. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195074. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18195657. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18195749. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18196081. SEMICONDUCTOR DEVICES HAVING DIFFERENT IMPURITY REGIONS IN ACTIVE PATTERN simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18196191. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18199014. SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18199115. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18199133. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18199516. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18201878. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18204449. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18212817. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18214861. INTEGRATED CIRCUIT SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18219232. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18224745. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18231594. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18231841. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18234596. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18239248. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18244257. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18298277. Isolation Structures in Semiconductor Devices simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)
- 18298678. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18300867. INTEGRATED CIRCUIT DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18306004. VERTICALLY STACKED TRANSISTORS AND FABRICATION THEREOF simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18318587. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18322234. INTEGRATED CIRCUIT DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18323715. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18331296. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18331463. SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18334099. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18334849. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18336477. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18340440. SEMICONDUCTOR DEVICES simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18345130. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18350433. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18350614. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18364521. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18365452. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18367549. INTEGRATED CIRCUIT INCLUDING STANDARD CELL WITH A METAL LAYER HAVING A PATTERN AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 18367852. INTEGRATED CIRCUIT DEVICE INCLUDING MULTI-CHANNEL TRANSISTOR simplified abstract (Samsung Electronics Co., Ltd.)
- 18368725. SEMICONDUCTOR DEVICE simplified abstract (Samsung Electronics Co., Ltd.)
- 18369236. SEMICONDUCTOR DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18376549. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18378874. SEMICONDUCTOR DEVICE INCLUDING BLOCKING LAYER AND SOURCE/DRAIN STRUCTURE simplified abstract (Samsung Electronics Co., Ltd.)
- 18379083. INTEGRATED CIRCUIT DEVICES simplified abstract (Samsung Electronics Co., Ltd.)
- 18379731. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18401780. Ion Implantation For Nano-FET simplified abstract (Taiwan Semiconductor Manufacturing Company, Ltd.)
- 18452858. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18453529. SEMICONDUCTOR DEVICE INCLUDING NANOSHEET TRANSISTOR simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18471730. SEMICONDUCTOR DEVICE simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18481433. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 18521975. SEMICONDUCTOR DEVICE AND FABRICATING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18523023. ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)
- 18524646. MEMORY DEVICE simplified abstract (SK hynix Inc.)
2
- 20240021615. SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
- 20240038841. SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)
- 20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)
B
- Blockchain patent applications on April 11th, 2024
- Blockchain patent applications on April 4th, 2024
- Blockchain patent applications on February 1st, 2024
- Blockchain patent applications on February 29th, 2024
- Blockchain patent applications on January 18th, 2024
- Blockchain patent applications on March 14th, 2024
- Blockchain patent applications on March 28th, 2024
- Blockchain patent applications on March 7th, 2024