20240087884.SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (samsung electronics co., ltd.)

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

Organization Name

samsung electronics co., ltd.

Inventor(s)

GYEOM Kim of Hwaseong-si (KR)

Dongwoo Kim of Incheon (KR)

Jihye Yi of Suwon-si (KR)

JINBUM Kim of Seoul (KR)

Sangmoon Lee of Suwon-si (KR)

Seunghun Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 20240087884 titled 'SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

Simplified Explanation

The semiconductor device described in the abstract includes an active region, a channel region, a source/drain region, a gate structure, a contact structure, a gate spacer, and a contact spacer. The source/drain region consists of a first epitaxial region with a recessed surface and a second epitaxial region on top of the first epitaxial region, including an extended portion that overlaps the contact structure.

• Active region on a semiconductor substrate
• Channel region on the active region
• Source/drain region adjacent to the channel region on the active region
• Gate structure overlapping the channel region
• Contact structure on the source/drain region
• Gate spacer between the contact structure and the gate structure
• Contact spacer surrounding the side surface of the contact structure

1. 1. 1. Potential Applications

- High-performance semiconductor devices - Advanced electronics and integrated circuits

1. 1. 1. Problems Solved

- Improved performance and efficiency of semiconductor devices - Enhanced functionality and reliability of electronic devices

1. 1. 1. Benefits

- Increased speed and power efficiency - Better control and optimization of electronic components

1. 1. 1. Potential Commercial Applications
         1. Advanced Semiconductor Technology for Enhanced Performance

1. 1. 1. Possible Prior Art

There may be prior art related to semiconductor devices with similar structures and configurations, but specific examples are not provided in the abstract.

1. 1. 1. 1. Unanswered Questions
            1. How does this semiconductor device compare to existing technologies in terms of performance and efficiency?

The abstract does not provide a direct comparison with existing technologies, so it is unclear how this device stands out in the market.

1. 1. 1. 1. 1. What specific industries or applications could benefit the most from this semiconductor technology?

The abstract mentions high-performance semiconductor devices and advanced electronics, but more details on potential target industries or applications would be helpful for understanding the market potential of this technology.

Original Abstract Submitted

a semiconductor device is provided. the semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. the source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.