18170104. SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Organization Name
Inventor(s)
Kyung Bin Chun of Suwon-si (KR)
Dong Suk Shin of Suwon-si (KR)
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract
This abstract first appeared for US patent application 18170104 titled 'SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Simplified Explanation
The semiconductor device described in the patent application includes a lower pattern on a substrate, a source/drain pattern on the lower pattern with a semiconductor liner film in contact, and an epitaxial insulating liner extending along a portion of the semiconductor liner film's sidewall. The epitaxial insulating liner is in contact with the semiconductor liner film, which has a first portion with a first point at a first height and a second point at a greater second height. The width of the semiconductor liner film is narrower at the first point compared to the second point, and the epitaxial insulating liner extends along a portion of the sidewall of the first portion of the semiconductor liner film.
- The semiconductor device includes a lower pattern, source/drain pattern, and epitaxial insulating liner to improve its performance and functionality.
- The epitaxial insulating liner provides insulation and protection to the semiconductor liner film and the lower pattern.
- The varying height and width of the semiconductor liner film allow for precise control and optimization of the device's electrical properties.
- The epitaxial insulating liner extends along the sidewall of the semiconductor liner film, enhancing its structural integrity and stability.
Potential Applications
- This semiconductor device can be used in various electronic devices, such as smartphones, computers, and IoT devices.
- It can be applied in integrated circuits, microprocessors, and memory devices to enhance their performance and efficiency.
Problems Solved
- The epitaxial insulating liner solves the problem of electrical leakage and interference between the semiconductor liner film and the lower pattern.
- The varying height and width of the semiconductor liner film address the challenge of controlling electrical properties and optimizing device performance.
Benefits
- Improved device performance and functionality due to the presence of the epitaxial insulating liner and semiconductor liner film.
- Enhanced insulation and protection of the lower pattern and semiconductor liner film, reducing electrical leakage and interference.
- Precise control and optimization of electrical properties, leading to better overall device performance.
- Increased structural integrity and stability of the semiconductor liner film through the extension of the epitaxial insulating liner along its sidewall.
Original Abstract Submitted
A semiconductor device includes a lower pattern on a substrate and protruding in a first direction, a source/drain pattern on the lower pattern and including a semiconductor liner film in contact with the lower pattern, and an epitaxial insulating liner extending along at least a portion of a sidewall of the semiconductor liner film, wherein the epitaxial insulating liner is in contact with the semiconductor liner film, wherein the semiconductor liner film includes a first portion, wherein the first portion of the semiconductor liner film includes a first point spaced apart from the lower pattern at a first height, and a second point spaced apart from the lower pattern at a second height, wherein the second height is greater than the first height, wherein a width of the semiconductor liner film in a second direction at the first point is less than a width of the semiconductor liner film in the second direction at the second point, and wherein the epitaxial insulating liner extends along at least a portion of a sidewall of the first portion of the semiconductor liner film.
