18350433. SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Minsu Seol of Suwon-si (KR)

Junyoung Kwon of Suwon-si (KR)

Keunwook Shin of Suwon-si (KR)

Minseok Yoo of Suwon-si (KR)

SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 18350433 titled 'SEMICONDUCTOR DEVICE INCLUDING TWO-DIMENSIONAL MATERIAL AND METHOD OF FABRICATING THE SAME

Simplified Explanation

The abstract describes a semiconductor device that includes a two-dimensional material layer with a polycrystalline structure, metallic nanoparticles on the material layer, source and drain electrodes on both sides of the material layer, and a gate insulating layer and gate electrode on the material layer between the source and drain electrodes.

• The device includes a two-dimensional semiconductor material layer with a polycrystalline structure.
• Metallic nanoparticles are partially placed on the two-dimensional material layer.
• Source and drain electrodes are present on both sides of the two-dimensional material layer.
• A gate insulating layer and gate electrode are located on the two-dimensional material layer between the source and drain electrodes.

Potential applications of this technology:

• This semiconductor device can be used in electronic devices such as transistors and integrated circuits.
• It can be applied in the development of high-performance and low-power electronic devices.
• The device can be utilized in the field of optoelectronics for efficient light emission and detection.

Problems solved by this technology:

• The use of two-dimensional semiconductor material with a polycrystalline structure allows for improved device performance and functionality.
• The presence of metallic nanoparticles enhances the electrical properties of the device.
• The gate insulating layer and gate electrode enable precise control of the device's electrical behavior.

Benefits of this technology:

• The device offers improved performance and efficiency compared to traditional semiconductor devices.
• It allows for the development of smaller and more compact electronic devices.
• The use of two-dimensional materials and metallic nanoparticles can lead to cost-effective manufacturing processes.

Original Abstract Submitted

A semiconductor device may include a two-dimensional material layer including a two-dimensional semiconductor material having a polycrystalline structure; metallic nanoparticles partially on the two-dimensional material layer; a source electrode and a drain electrode respectively on both sides of the two-dimensional material layer; and a gate insulating layer and a gate electrode on the two-dimensional material layer between the source electrode and the drain electrode.