17851979. INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES simplified abstract (Intel Corporation)

INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES

Organization Name

Intel Corporation

Inventor(s)

Abhishek Anil Sharma of Portland OR (US)

Wilfred Gomes of Portland OR (US)

INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES - A simplified explanation of the abstract

This abstract first appeared for US patent application 17851979 titled 'INTEGRATED CIRCUIT STRUCTURES HAVING INVERTERS WITH CONTACTS BETWEEN NANOWIRES

Simplified Explanation

The patent application describes a structure for integrated circuits that includes nanowires and inverters with contacts between them. Here is a simplified explanation of the abstract:

• The integrated circuit structure consists of a stack of horizontal nanowires arranged vertically.
• A conductive contact is placed next to a source or drain region of the nanowire stack, with a cut in the vertical direction.
• A gate stack surrounds the channel region of each horizontal nanowire, and it is spaced apart from the conductive contact.

Potential applications of this technology:

• Integrated circuits: The described structure can be used in the development of advanced integrated circuits.
• Nanoelectronics: This technology can contribute to the advancement of nanoelectronic devices.

Problems solved by this technology:

• Improved performance: The structure with nanowires and inverters can enhance the performance of integrated circuits.
• Miniaturization: The use of nanowires allows for smaller and more compact circuit designs.

Benefits of this technology:

• Higher efficiency: The structure enables improved efficiency in integrated circuits.
• Enhanced functionality: The use of nanowires and inverters provides additional functionality to integrated circuits.
• Compact design: The technology allows for smaller and more space-efficient circuit designs.

Original Abstract Submitted

Structures having inverters with contacts between nanowires are described. In an example, an integrated circuit structure includes a stack of horizontal nanowires along a vertical direction. A conductive contact is laterally adjacent to a source or drain region of the stack of horizontal nanowires, the conductive contact having a cut in the vertical direction. A gate stack is over the stack of horizontal nanowires and surrounding a channel region of each of the horizontal nanowires, the gate stack laterally spaced apart from the conductive contact.