17827779. SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Yi-Ruei Jhan of Keelung City (TW)

Kuan-Ting Pan of Taipei City (TW)

Yu-Wei Lu of Taipei City (TW)

Shi-Ning Ju of Hsinchu City (TW)

Kuo-Cheng Chiang of Hsinchu County (TW)

Chih-Hao Wang of Hsinchu County (TW)

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17827779 titled 'SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

Simplified Explanation

The abstract describes a semiconductor device and a method of forming it. The device includes a substrate with multiple fins, semiconductor nanosheets stacked on the fins, gate stacks wrapping the nanosheets, an isolation structure around the fins, and a separator structure on the isolation structure to separate the gate stacks.

• The device includes a substrate with multiple fins.
• Semiconductor nanosheets are stacked on the fins.
• Gate stacks wrap the semiconductor nanosheets.
• An isolation structure surrounds the fins.
• A separator structure is placed on the isolation structure to separate the gate stacks.
• The separator structure consists of a body and a cap.
• The cap has two portions, with the second portion wrapped by the first portion.

Potential applications of this technology:

• Semiconductor devices for various electronic applications.
• High-performance transistors for computing and communication devices.
• Power-efficient and compact integrated circuits.

Problems solved by this technology:

• Provides a structure for efficient stacking of semiconductor nanosheets.
• Enables effective isolation and separation of gate stacks.
• Enhances the performance and functionality of semiconductor devices.

Benefits of this technology:

• Improved performance and efficiency of semiconductor devices.
• Enables the development of smaller and more compact electronic devices.
• Enhances the integration and functionality of integrated circuits.

Original Abstract Submitted

Provided are a semiconductor device and a method of forming the same. The semiconductor device includes a semiconductor device. The semiconductor device includes a substrate including a plurality of fins, a plurality of semiconductor nanosheets stacked on the plurality of fins, a plurality of gate stacks wrapping the plurality of semiconductor nanosheets, an isolation structure around the plurality of fins, and a separator structure on the isolation structure to separate the plurality of gate stacks from each other. The separator structure includes a body and a cap on the body. The cap includes a first portion and a second portion. Sidewalls and bottom of the second portion is wrapped by the first portion.