18513297. SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION simplified abstract (SAMSUNG ELECTRONICS CO., LTD.)

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

Organization Name

SAMSUNG ELECTRONICS CO., LTD.

Inventor(s)

GYEOM Kim of Hwaseong-si (KR)

Dongwoo Kim of Incheon (KR)

Jihye Yi of Suwon-si (KR)

JINBUM Kim of Seoul (KR)

Sangmoon Lee of Suwon-si (KR)

Seunghun Lee of Hwaseong-si (KR)

SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION - A simplified explanation of the abstract

This abstract first appeared for US patent application 18513297 titled 'SEMICONDUCTOR DEVICE INCLUDING EPITAXIAL REGION

Simplified Explanation

The semiconductor device described in the patent application includes an active region, a channel region, a source/drain region, a gate structure, a contact structure, a gate spacer, and a contact spacer.

• The source/drain region consists of a first epitaxial region with a recessed surface and a second epitaxial region on top of the first epitaxial region.
• The second epitaxial region has an extended portion that overlaps the contact structure in a vertical direction and extends in a horizontal direction, overlapping the contact spacer in the vertical direction.

Potential Applications

• This semiconductor device could be used in integrated circuits for various electronic devices such as smartphones, computers, and tablets.
• It could also be utilized in power management systems, sensors, and communication devices.

Problems Solved

• This technology helps improve the performance and efficiency of semiconductor devices by optimizing the source/drain region design.
• It enhances the overall functionality and reliability of integrated circuits by reducing resistance and improving contact between components.

Benefits

• Increased speed and performance of electronic devices.
• Enhanced power efficiency and reduced energy consumption.
• Improved reliability and longevity of semiconductor devices.

Original Abstract Submitted

A semiconductor device is provided. The semiconductor device includes: an active region on a semiconductor substrate; a channel region on the active region; a source/drain region adjacent to the channel region on the active region; a gate structure overlapping the channel region, on the channel region; a contact structure on the source/drain region; a gate spacer between the contact structure and the gate structure; and a contact spacer surrounding a side surface of the contact structure. The source/drain region includes a first epitaxial region having a recessed surface and a second epitaxial region on the recessed surface of the first epitaxial region, and the second epitaxial region includes an extended portion, extended from a portion overlapping the contact structure in a vertical direction, in a horizontal direction and overlapping the contact spacer in the vertical direction.