18523023. ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL simplified abstract (Taiwan Semiconductor Manufacturing Co., Ltd.)

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ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL

Organization Name

Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor(s)

Guo-Huei Wu of Hsinchu (TW)

Chih-Liang Chen of Hsinchu (TW)

Li-Chun Tien of Hsinchu (TW)

ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL - A simplified explanation of the abstract

This abstract first appeared for US patent application 18523023 titled 'ACTIVE ZONES WITH OFFSET IN SEMICONDUCTOR CELL

Simplified Explanation

The integrated circuit described in the abstract includes different distances between power rails and active zones, aligned transistors, and specific directions for these distances.

  • The integrated circuit includes first-type transistors aligned within a first-type active zone and second-type transistors aligned within a second-type active zone.
  • There are first and second power rails extending in a first direction, with different distances between the long edge of each power rail and the alignment boundary of the corresponding active zone.
  • The distances are along a second direction perpendicular to the first direction.

Potential Applications

This technology could be applied in:

  • Semiconductor manufacturing
  • Electronic devices
  • Power management systems

Problems Solved

This technology helps address issues related to:

  • Power distribution efficiency
  • Circuit layout optimization
  • Transistor alignment accuracy

Benefits

The benefits of this technology include:

  • Improved performance
  • Enhanced power efficiency
  • Higher integration density

Potential Commercial Applications

Potential commercial applications of this technology could be in:

  • Consumer electronics
  • Automotive systems
  • Industrial automation

Possible Prior Art

One possible prior art for this technology could be:

  • Integrated circuits with aligned transistors and power rails

Unanswered Questions

How does this technology impact overall circuit performance?

This article does not delve into the specific performance enhancements or trade-offs associated with the described integrated circuit design. Further research or testing may be needed to determine the exact impact on circuit performance.

What are the potential challenges in implementing this technology on a larger scale?

The article does not address the scalability or potential challenges of implementing this technology in larger integrated circuits or complex systems. Additional studies or simulations may be required to assess the feasibility and limitations of scaling up this design.


Original Abstract Submitted

An integrated circuit includes first-type transistors aligned within a first-type active zone, second-type transistors aligned within a second-type active zone, a first power rail and a second power rail extending in a first direction. A first distance between the long edge of the first power rail and the first alignment boundary of the first-type active zone is different from a second distance between the long edge of the second power rail and the first alignment boundary of the second-type active zone. Each of the first distance and the second distance is along a second direction which is perpendicular to the first direction.