17886876. SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME simplified abstract (TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.)

SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

Organization Name

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.

Inventor(s)

Kuan-Ting Pan of Taipei City (TW)

Kuo-Cheng Chiang of Zhubei City (TW)

Shi-Ning Ju of Hsinchu City (TW)

Yi-Ruei Jhan of Keelung City (TW)

Wei-Ting Wang of Taipei City (TW)

Chih-Hao Wang of Baoshan Township (TW)

SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17886876 titled 'SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

Simplified Explanation

The method described in the patent application involves manufacturing a semiconductor structure with a unique design to improve performance and efficiency.

• Form a fin structure on a substrate with alternating layers of first and second semiconductor materials.
• Create a dummy gate structure over the fin structure.
• Add gate spacers on the sides of the dummy gate structure.
• Remove the dummy gate structure to reveal the fin structure.
• Partially remove the second semiconductor material layers to create concave portions on the sidewalls.
• Insert dielectric spacers into the concave portions.
• Remove the first semiconductor material layers to create gaps.
• Form a gate structure in the gaps to encase the second semiconductor material layers and dielectric spacers.

Potential applications of this technology:

• Advanced semiconductor devices
• High-performance integrated circuits
• Power-efficient electronics

Problems solved by this technology:

• Enhancing semiconductor structure performance
• Increasing efficiency of electronic devices
• Improving overall device functionality

Benefits of this technology:

• Improved performance and efficiency
• Enhanced functionality of semiconductor devices
• Potential for smaller and more powerful electronic devices

Original Abstract Submitted

A method for manufacturing a semiconductor structure is provided. The method includes forming a fin structure protruding from a substrate, wherein the fin structure includes first semiconductor material layers and second semiconductor material layers alternately stacked. The method includes forming a dummy gate structure across the fin structure. The method includes forming a gate spacer on the sidewall of the dummy gate structure. The method includes removing the dummy gate structure to expose the fin structure. The method includes partially removing the second semiconductor material layers to form concave portions on sidewalls of the second semiconductor material layers. The method includes forming dielectric spacers in the concave portions. The method includes removing the first semiconductor material layers to form gaps. The method includes forming a gate structure in the gaps to wrap around the second semiconductor material layers and the dielectric spacers.