17945528. FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME simplified abstract (Samsung Electronics Co., Ltd.)

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FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME

Organization Name

Samsung Electronics Co., Ltd.

Inventor(s)

Dukhyun Choe of Suwon-si (KR)

Jinseong Heo of Suwon-si (KR)

Yunseong Lee of Osan-si (KR)

FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME - A simplified explanation of the abstract

This abstract first appeared for US patent application 17945528 titled 'FERROELECTRIC MATERIAL, AND ELECTRONIC DEVICE INCLUDING THE SAME

Simplified Explanation

The patent application describes a ferroelectric material and an electronic device that utilizes this material. The ferroelectric material consists of two domains with different polarization layers and spacer layers, separated by a structural layer at the domain wall.

  • The ferroelectric material includes a first domain with a polarization layer polarized in a first direction and a spacer layer adjacent to it.
  • The material also includes a second domain with a polarization layer polarized in a second direction different from the first direction and a spacer layer adjacent to it.
  • A structural layer is present at the domain wall between the first and second domains, and it belongs to the Pbcn space group.

Potential applications of this technology:

  • Electronic devices that require ferroelectric materials, such as memory devices, sensors, and actuators.
  • Devices that benefit from the unique properties of ferroelectric materials, such as non-volatile memory, energy harvesting, and piezoelectric devices.

Problems solved by this technology:

  • The ferroelectric material allows for the creation of distinct domains with different polarization directions, providing flexibility in designing electronic devices.
  • The structural layer at the domain wall helps stabilize the domains and prevent unwanted interactions between them.

Benefits of this technology:

  • Improved performance and functionality of electronic devices utilizing ferroelectric materials.
  • Enhanced stability and reliability due to the presence of the structural layer at the domain wall.
  • Increased design flexibility in creating electronic devices with specific polarization characteristics.


Original Abstract Submitted

Provided are a ferroelectric material and an electronic device including same, the ferroelectric material including: a first domain including a first polarization layer which is polarized in a first direction and a first spacer layer disposed adjacent to the first polarization layer; a second domain including a second polarization layer which is polarized in a second direction distinct from the first direction and a second spacer layer disposed adjacent to the second polarization layer; and a structural layer, which is disposed at a domain wall between the first domain and the second domain, and belongs to/has atoms arranged according to a Pbcn space group.